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A5KP250A-G PDF预览

A5KP250A-G

更新时间: 2024-11-18 19:33:39
品牌 Logo 应用领域
上华 - COMCHIP 二极管电视
页数 文件大小 规格书
5页 101K
描述
TVS DIODE 250VWM 405VC R-6

A5KP250A-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.79二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

A5KP250A-G 数据手册

 浏览型号A5KP250A-G的Datasheet PDF文件第2页浏览型号A5KP250A-G的Datasheet PDF文件第3页浏览型号A5KP250A-G的Datasheet PDF文件第4页浏览型号A5KP250A-G的Datasheet PDF文件第5页 
5000W Transient Voltage Suppressor  
A5KP-G Series  
Breakdown Voltage: 6.8 to 440 Volts  
Peak Pulse Power: 5000 Watts  
RoHS Device  
R-6  
Features  
- Glass passivated chip.  
0.052(1.32)  
0.048(1.22)  
DIA.  
- 5000W peak pulse power capability with a 10/1000µs  
waveform, repetitive rate (duty cycle):0.01%  
- Low leakage.  
1.0(25.4)  
MIN.  
- Uni and Bidirectional unit.  
- Excellent clamping capability.  
- Very fast response time.  
- Comply with AEC-Q101  
0.360(9.14)  
0.340(8.64)  
R
- UL recognized file # E349157  
0.360(9.14)  
0.340(8.64)  
- Range: A5KP5.0(C)A thru. A5KP190(C)A  
DIA.  
Mechanical Data  
1.0(25.4)  
MIN.  
-Case: Molded plastic.  
-Epoxy: UL 94V-0 rate flame retardant  
-Lead: Solderable per MIL-STD-202,  
method 208 guranteed.  
Dimensions in inches and (millimeter)  
-Polarity: Color band denotes cathode  
end except Bipolar.  
-Mounting position: Any  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derated current by 20%.  
Symbol  
Parameter  
Value  
Unit  
Peak power dissipation with a 10/1000μs  
waveform (Note 1)  
PPP  
W
5000  
Peak pulse current with a 10/1000μs waveform  
IPP  
PD  
A
W
A
See Next Table  
(Note 1)  
Power dissipation on infinite heatsink at TL=75°C  
8.0  
Peak forward surge current, 8.3ms single  
half sine-wave unidirectional only (Note 2)  
IFSM  
500  
Maximum instantaneous forward voltage at  
100A for uni-directional devices only (Note 3)  
3.5 / 5.0  
VF  
V
Operating junction and storage temperature  
range  
TJ, TSTG  
-55 to +150  
°C  
NTOES:  
(1) Non-repetitive current pulse, per fig.5 and derated above TA=25°C per fig.1  
(2) Measured on 8.3 ms single half sine wave of equivalent square wave, duty cycle=4 pulses per minute maximum.  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:B  
Page 1  
AQW-BTV06  
Comchip Technology CO., LTD.  

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