Datasheet > A5KP12CA-G

A5KP12CA-G

更新时间： 2024-11-18 19:33:39

品牌	Logo	应用领域
上华 - COMCHIP		二极管电视
页数	文件大小	规格书
5页	101K
描述
TVS DIODE 12VWM 19.9VC R-6

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中文翻译

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技术参数
数据手册

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A5KP12CA-G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	2.36	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

A5KP12CA-G 数据手册

5000W Transient Voltage Suppressor

A5KP-G Series

Breakdown Voltage: 6.8 to 440 Volts

Peak Pulse Power: 5000 Watts

RoHS Device

R-6

Features

- Glass passivated chip.

0.052(1.32)

0.048(1.22)

DIA.

- 5000W peak pulse power capability with a 10/1000µs

waveform, repetitive rate (duty cycle):0.01%

- Low leakage.

1.0(25.4)

MIN.

- Uni and Bidirectional unit.

- Excellent clamping capability.

- Very fast response time.

- Comply with AEC-Q101

0.360(9.14)

0.340(8.64)

- UL recognized file # E349157

0.360(9.14)

0.340(8.64)

- Range: A5KP5.0(C)A thru. A5KP190(C)A

DIA.

Mechanical Data

1.0(25.4)

MIN.

-Case: Molded plastic.

-Epoxy: UL 94V-0 rate flame retardant

-Lead: Solderable per MIL-STD-202,

method 208 guranteed.

Dimensions in inches and (millimeter)

-Polarity: Color band denotes cathode

end except Bipolar.

-Mounting position: Any

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive loaded.

For capacitive load, derated current by 20%.

Symbol

Parameter

Value

Unit

Peak power dissipation with a 10/1000μs

waveform (Note 1)

PPP

5000

Peak pulse current with a 10/1000μs waveform

IPP

See Next Table

(Note 1)

Power dissipation on infinite heatsink at TL=75°C

8.0

Peak forward surge current, 8.3ms single

half sine-wave unidirectional only (Note 2)

IFSM

500

Maximum instantaneous forward voltage at

100A for uni-directional devices only (Note 3)

3.5 / 5.0

Operating junction and storage temperature

range

TJ, TSTG

-55 to +150

°C

NTOES:

(1) Non-repetitive current pulse, per fig.5 and derated above TA=25°C per fig.1

(2) Measured on 8.3 ms single half sine wave of equivalent square wave, duty cycle=4 pulses per minute maximum.

(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

Company reserves the right to improve product design , functions and reliability without notice.

REV:B

Page 1

AQW-BTV06

Comchip Technology CO., LTD.

12 3 4 5

中文翻译

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