Datasheet > A43L2616A

A43L2616A

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
联笙电子 - AMICC		动态存储器
页数	文件大小	规格书
42页	1102K
描述
1M X 16 Bit X 4 Banks Synchronous DRAM

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数据手册

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A43L2616A 数据手册

A43L2616A

Preliminary

1M X 16 Bit X 4 Banks Synchronous DRAM

Feature

ꢀJEDEC standard 3.3V power supply

ꢀLVTTL compatible with multiplexed address

ꢀBurst Read Single-bit Write operation

ꢀDQM for masking

ꢀAuto & self refresh

ꢀFour banks / Pulse RAS

ꢀ64ms refresh period (4K cycle)

ꢀCommercial Temperature Operation : 0°C~70°C

ꢀIndustrial Temperature Operation : -40°C~85°C for –U

ꢀMRS cycle with address key programs

- CAS Latency (2,3)

- Burst Length (1,2,4,8 & full page)

- Burst Type (Sequential & Interleave)

grade

ꢀAll inputs are sampled at the positive going edge of the

system clock

ꢀ54 Pin TSOP (II) and 54 Balls CSP (8mm x 8mm)

ꢀClock Frequency: 166MHz @ CL=3

143MHz @ CL=3

General Description

The A43L2616A is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 X 1,048,576 words by

16 bits, fabricated with AMIC’s high performance CMOS

technology. Synchronous design allows precise cycle

control with the use of system clock.

I/O transactions are possible on every clock cycle. Range

of operating frequencies, programmable latencies allows

the same device to be useful for a variety of high

bandwidth,

high

performance

memory

system

applications.

Pin Configuration

ꢀTSOP (II)

54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28

A43L2616AV

9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

PRELIMINARY (November, 2004, Version 0.0)

AMIC Technology, Corp.

123 4 5 6 7...42

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与A43L2616A相关器件

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