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A43E1632G-75I PDF预览

A43E1632G-75I

更新时间: 2022-04-25 03:48:46
品牌 Logo 应用领域
联笙电子 - AMICC 动态存储器
页数 文件大小 规格书
42页 502K
描述
1M X 16 Bit X 4 Banks Synchronous DRAM

A43E1632G-75I 数据手册

 浏览型号A43E1632G-75I的Datasheet PDF文件第5页浏览型号A43E1632G-75I的Datasheet PDF文件第6页浏览型号A43E1632G-75I的Datasheet PDF文件第7页浏览型号A43E1632G-75I的Datasheet PDF文件第9页浏览型号A43E1632G-75I的Datasheet PDF文件第10页浏览型号A43E1632G-75I的Datasheet PDF文件第11页 
A43L2616B  
Operating AC Parameter  
(AC operating conditions unless otherwise noted)  
Version  
Symbol  
Parameter  
Unit  
Note  
-6  
12  
18  
-7  
14  
20  
tRRD(min)  
tRCD(min)  
Row active to row active delay  
ns  
ns  
1
1
RAS to  
delay  
CAS  
tRP(min)  
tRAS(min)  
tRAS(max)  
tRC(min)  
Row precharge time  
Row active time  
18  
42  
20  
42  
ns  
ns  
μs  
ns  
1
1
100  
Row cycle time  
60  
63  
1
tCDL(min)  
tRDL(min)  
tBDL(min)  
tCCD(min)  
Last data in new col. Address delay  
Last data in row precharge  
6
12  
6
7
14  
7
ns  
ns  
ns  
ns  
2
2
2
Last data in to burst stop  
Col. Address to col. Address delay  
6
7
CAS Latency = 3  
CAS Latency = 2  
2
1
Number of valid output data  
ea  
3
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and  
then rounding off to the next higher integer.  
2. Minimum delay is required to complete write.  
3. In case of row precharge interrupt, auto precharge and read burst stop.  
(December, 2009, Version 1.3)  
7
AMIC Technology, Corp.  

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