5秒后页面跳转
A43E16321G-95F PDF预览

A43E16321G-95F

更新时间: 2024-01-21 16:54:40
品牌 Logo 应用领域
联笙电子 - AMICC 时钟动态存储器内存集成电路
页数 文件大小 规格书
45页 724K
描述
Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, CSP-90

A43E16321G-95F 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:LFBGA, BGA90,9X15,32Reach Compliance Code:unknown
风险等级:5.75访问模式:FOUR BANK PAGE BURST
最长访问时间:7 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):105 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PBGA-B90
长度:13 mm内存密度:67108864 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:32
功能数量:1端口数量:1
端子数量:90字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA90,9X15,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH电源:1.8 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1.4 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.00001 A
子类别:DRAMs最大压摆率:0.1 mA
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

A43E16321G-95F 数据手册

 浏览型号A43E16321G-95F的Datasheet PDF文件第4页浏览型号A43E16321G-95F的Datasheet PDF文件第5页浏览型号A43E16321G-95F的Datasheet PDF文件第6页浏览型号A43E16321G-95F的Datasheet PDF文件第8页浏览型号A43E16321G-95F的Datasheet PDF文件第9页浏览型号A43E16321G-95F的Datasheet PDF文件第10页 
A43E16321  
AC Operating Test Conditions  
(VDD = 3.3V ±0.3V, TA = 0°C to +70°C or TA = -40ºC to +85ºC)  
Parameter  
Value  
Unit  
V
AC input levels  
0.9 x VDDQ/0.2  
0.5 x VDDQ  
tr/tf = 1/1  
Input timing measurement reference level  
Input rise and all time (See note3)  
Output timing measurement reference level  
Output load condition  
V
ns  
V
0.5 x VDDQ  
See Fig.2  
1.8V  
VOH(DC) = VDDQ-0.2V, IOH = -0.1mA  
13.9KΩ VOL(DC) = 0.2V, IOL = 0.1mA  
VTT =0.5V x VDDQ  
50Ω  
Output  
ZO=50Ω  
OUTPUT  
30pF  
10.6KΩ  
30pF  
(Fig. 2) AC Output Load Circuit  
(Fig. 1) DC Output Load Circuit  
AC Characteristics  
(AC operating conditions unless otherwise noted)  
-75  
-95  
Symbol  
Parameter  
Unit  
Note  
Min  
7.5  
12  
-
Max  
Min  
9.5  
15  
-
Max  
CAS Latency =3  
CAS Latency =2  
CAS Latency =3  
CAS Latency =2  
tCC  
CLK cycle time  
1000  
1000  
ns  
1
6
8
-
7
9
-
CLK to valid output delay  
tSAC  
tOH  
tCH  
ns  
ns  
ns  
1,2  
2
-
-
Output data hold time  
CLK high pulse width  
2
2
CAS Latency =3  
CAS Latency =2  
CAS Latency =3  
CAS Latency =2  
CAS Latency =3  
CAS Latency =2  
2.5  
2.5  
2.5  
2.5  
2
-
3
-
3
-
3
-
-
3
-
tCL  
tSS  
CLK low pulse width  
Input setup time  
ns  
ns  
3
3
-
3
-
-
2
-
2
-
2
-
tSH  
Input hold time  
1
-
1
-
ns  
ns  
3
2
tSLZ  
CLK to output in Low-Z  
1
-
1
-
CAS Latency =3  
CAS Latency =2  
-
6
8
-
7
8
tSHZ  
CLK to output in Hi-Z  
ns  
-
-
CL=CAS Latency.  
*All AC parameters are measured from half to half.  
Note : 1. Parameters depend on programmed CAS latency.  
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.  
3. Assumed input rise and fall time (tr & tf) = 1ns.  
If tr & tf is longer than 1ns, transient time compensation should be considered,  
i.e., [(tr + tf)/2-1]ns should be added to the parameter.  
PRELIMINARY (February, 2008, Version 0.1)  
6
AMIC Technology, Corp.  

与A43E16321G-95F相关器件

型号 品牌 描述 获取价格 数据表
A43E16321G-95UF AMICC Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90, CSP-90

获取价格

A43E1632G-75I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43E1632G-95I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43E1632V-75I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43E1632V-95I AMICC 1M X 16 Bit X 4 Banks Synchronous DRAM

获取价格

A43E26161 AMICC 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM

获取价格