Datasheet > A42L8316S-30

A42L8316S-30

更新时间： 2022-11-25 16:57:13

品牌	Logo	应用领域
联笙电子 - AMICC		/
页数	文件大小	规格书
25页	274K
描述
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

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A42L8316S-30 数据手册

A42L8316 Series

AC Characteristics (continued) (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

Test Conditions:

Input timing reference level: VIH/VIL=2.0V/0.8V

Output reference level: VOH/VOL=2.0V/0.8V

Output Load: 2TTL gate + CL (50pF)

Assumed tT=2ns

-30

-35

-40

Std

Symbol

Parameter

Unit

Notes

Min.

Max.

Min. Max.

tRWC

tRWD

Read-Modify-Write Cycle Time

RAS to WE Delay Time

(Read-Modify-Write)

tCWD

tAWD

tOEH

CAS to WE Delay Time (Read-

Modify-Write)

Column Address to WE Delay

Time (Read-Modify-Write)

OE Hold Time from WE

OE High Pulse Width

tOEP

tPC

Read or Write Cycle Time (EDO

Page)

tCPA

Access Time from CAS Precharge

(EDO Page)

tCP

CAS Precharge Time

tPCM

tCRW

EDO Page Mode RMW Cycle Time

EDO Page Mode CAS Pulse Width

(RMW)

tRASP

tCSR

200K

RAS Pulse Width (EDO Page)

CAS Setup Time

( CAS -before-RAS)

tCHR

tRPC

CAS Hold Time

( CAS -before-RAS)

RAS to CAS Precharge Time

PRELIMINARY

(August, 2002, Version 0.1)

AMIC Technology, Inc.

1...6 7 8910 11 12...25

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