Datasheet > A42L8316S-30

A42L8316S-30

更新时间： 2022-11-25 16:57:13

品牌	Logo	应用领域
联笙电子 - AMICC		/
页数	文件大小	规格书
25页	274K
描述
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

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数据手册

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A42L8316S-30 数据手册

A42L8316 Series

AC Characteristics (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

Test Conditions:

Input timing reference level: VIH/VIL=2.0V/0.8V

Output reference level: VOH/VOL=2.0V/0.8V

Output Load: 2TTL gate + CL (50pF)

Assumed tT=2ns

Std

-30

-35

-40

Symbol

Parameter

Unit

Notes

Min.

Max.

Min.

Max.

Min.

Max.

Transition Time (Rise and Fall)

4, 5

tRC

Random Read or Write Cycle

Time

tRP

RAS Precharge Time

RAS Pulse Width

tRAS

tCAS

tRCD

tRAD

10K

CAS Pulse Width

RAS to CAS Delay Time

RAS to Column Address Delay

Time

tRSH

tCSH

tCRP

CAS to RAS Hold Time

CAS Hold Time

CAS to RAS Precharge Time

Row Address Setup Time

Row Address Hold Time

tASR

tRAH

tCLZ

CAS to Output in Low Z

Access Time from RAS

Access Time from CAS

tRAC

tCAC

tAA

6,7

6, 13

7, 13

Access Time from Column

Address

tOEA

tAR

OE Access Time

Column Address Hold Time from

RAS

PRELIMINARY

(August, 2002, Version 0.1)

AMIC Technology, Inc.

1...4 5 678 9 10...25

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