Datasheet > A42L8316S-30

A42L8316S-30

更新时间： 2022-11-25 16:57:13

品牌	Logo	应用领域
联笙电子 - AMICC		/
页数	文件大小	规格书
25页	274K
描述
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

A42L8316S-30 数据手册

A42L8316 Series

Preliminary

256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

Features

nOrganization: 262,144 words X 16 bits

nPart Identification

nIndustrial operating temperature range: -40°C to 85°C

for -U

nFast Page Mode with Extended Data Out

- A42L8316 (512 Ref.)

n Single 3.3V power supply/built-in VBB generator

nLow power consumption

- Operating: 110mA (-30 max)

- Standby: 2.5mA (TTL), 1.5mA (CMOS)

1.0mA (Self-refresh current)

nHigh speed

nSeparate

(

) for byte selection

UCAS LCAS

CAS

n512 Refresh Cycle in 8ms

nRead-modify-write, RAS -only, CAS -before- RAS ,

Hidden refresh capability

nTTL-compatible, three-state I/O

nJEDEC standard packages

- 30/35/40 ns RAS access time

- 16/17/18 ns column address access time

- 400mil, 40-pin SOJ

- 400mil, 40/44 TSOP type II package

- 9/10/11 ns CAS access time

- 14/16/18 ns EDO Page Mode Cycle Time

This allow random access of up to 512 words within a row

at a 71/62/55 MHz EDO cycle, making the A42L8316

ideally suited for graphics, digital signal processing and

high performance computing systems.

General Description

The A42L8316 is a new generation randomly accessed

memory for graphics, organized in a 262,144-word by 16-

bit configuration. This product can execute Byte Write

and Byte Read operation via two

pins.

CAS

The A42L8316 offers an accelerated Fast Page Mode

Pin Descriptions

Pin Configuration

Symbol

Description

Address Inputs

nSOJ

n TSOP

A0 – A8

I/O0 - I/O15 Data Input/Output

VSS

I/O15

I/O14

I/O13

I/O12

VSS

I/O11

I/O10

I/O9

VCC

VSS

VCC

I/O0

I/O1

I/O2

I/O3

VCC

I/O4

I/O5

I/O6

I/O7

I/O0

I/O1

I/O15

I/O14

Row Address Strobe

RAS

I/O2

I/O3

VCC

I/O4

I/O5

I/O6

I/O7

I/O13

I/O12

VSS

I/O11

I/O10

I/O9

I/O8

Column Address Strobe for Lower Byte

LCAS

UCAS

(I/O0 – I/O7)

Column Address Strobe for Upper Byte

(I/O8 – I/O15)

I/O8

Write Enable

LCAS

UCAS

RAS

LCAS

UCAS

RAS

Output Enable

VCC

VSS

3.3V Power Supply

Ground

VSS

No Connection

VCC

VSS

VCC

cycle with a feature called Extended Data Out (EDO).

PRELIMINARY

(August, 2002, Version 0.1)

AMIC Technology, Inc.

123 4 5 6 7...25

下载PDF

与A42L8316S-30相关器件

型号	品牌	描述	获取价格	数据表
A42L8316S-35	AMICC	256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE	获取价格
A42L8316S-35F	AMICC	EDO DRAM, 256KX16, 35ns, CMOS, PDSO40, SOJ-40	获取价格
A42L8316S-40	AMICC	256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE	获取价格
A42L8316S-40F	AMICC	EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, SOJ-40	获取价格
A42L8316SERIES	ETC	256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE	获取价格
A42L8316V	AMICC	256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE	获取价格