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A42L8316S-30 PDF预览

A42L8316S-30

更新时间: 2022-11-25 16:57:13
品牌 Logo 应用领域
联笙电子 - AMICC /
页数 文件大小 规格书
25页 274K
描述
256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

A42L8316S-30 数据手册

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A42L8316 Series  
Selection Guide  
Symbol  
Description  
-30  
-35  
-40  
Unit  
tRAC  
30  
35  
40  
ns  
Maximum RAS Access Time  
tAA  
Maximum Column Address Access Time  
Maximum CAS Access Time  
16  
9
17  
10  
18  
11  
ns  
ns  
tCAC  
tOEA  
9
10  
11  
ns  
Maximum Output Enable ( OE) Access Time  
Minimum Read or Write Cycle Time  
Minimum EDO Cycle Time  
tRC  
tPC  
54  
14  
62  
16  
70  
18  
ns  
ns  
Functional Description  
The A42L8316 reads and writes data by multiplexing an  
18-bit address into a 9-bit row and 9-bit column address.  
The A42L8316 offers an accelerated Fast Page Mode  
cycle through a feature called Extended Data Out, which  
and  
are used to strobe the row address and the  
keeps the output drivers on during the  
precharge  
RAS  
CAS  
CAS  
column address, respectively.  
time (tcp). Since data can be output after  
goes high,  
CAS  
the user is not required to wait for valid data to appear  
before starting the next access cycle. Data-out will remain  
The A42L8316 has two  
CAS  
inputs:  
controls I/O0-  
LCAS  
valid as long as RAS and OE are low, and WE is high;  
this is the only characteristic which differentiates Extended  
Data Out operation from a standard Read or Fast Page  
Read.  
I/O7, and  
controls I/O8 - I/O15,  
and  
UCAS  
UCAS  
LCAS  
function in an identical manner to  
in that either will  
CAS  
generate an internal  
signal. The  
function and  
CAS  
CAS  
CAS  
timing are determined by the first  
(
or  
UCAS  
A memory cycle is terminated by returning both RAS and  
) to transition low and by the last to transition high.  
LCAS  
high. Memory cell data will retain its correct state by  
maintaining power and accessing all 512 combinations of  
the 9-bit row addresses, regardless of sequence, at least  
CAS  
Byte Read and Byte Write are controlled by using  
LCAS  
and  
separately.  
UCAS  
once every 8ms through any RAS cycle (Read, Write) or  
A Read cycle is performed by holding the WE signal high  
during RAS/ operation. A Write cycle is executed by  
RAS Refresh cycle (RAS-only, CBR, or Hidden). The CBR  
Refresh cycle automatically controls the row addresses by  
invoking the refresh counter and controller.  
CAS  
holding the WE signal low during RAS /  
operation;  
CAS  
the input data is latched by the falling edge of WE or  
, whichever occurs later. The data inputs and outputs  
Power-On  
CAS  
are routed through 16 common I/O pins, with RAS,  
,
CAS  
The initial application of the VCC supply requires a 200 µs  
wait followed by a minimum of any eight initialization cycles  
WE and OE controlling the in direction.  
containing a RAS clock. During Power-On, the VCC  
EDO Page Mode operation all 512 columns within a  
selected row to be randomly accessed at a high data rate.  
A EDO Page Mode cycle is initiated with a row address  
current is dependent on the input levels of RAS and  
.
CAS  
It is recommended that RAS and  
track with VCC or  
CAS  
be held at a valid VIH during Power-On to avoid current  
surges.  
latched by RAS followed by a column address latched by  
. While holding RAS low,  
can be toggled to  
CAS  
CAS  
strobe changing column addresses, thus achieving shorter  
cycle times.  
PRELIMINARY  
(August, 2002, Version 0.1)  
2
AMIC Technology, Inc.  

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