Datasheet > A3T21H456W23S

A3T21H456W23S

更新时间： 2022-02-26 13:10:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	671K
描述
N-Channel Enhancement-Mode Lateral MOSFET

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A3T21H456W23S 数据手册

Document Number: A3T21H456W23S

Rev. 1, 08/2018

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

A3T21H456W23SR6

This 87 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications requiring very wide instantaneous

bandwidth capability covering the frequency range of 2110 to 2200 MHz.

2110–2200 MHz, 87 W AVG., 30 V

AIRFAST RF POWER LDMOS

TRANSISTOR

2100 MHz



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 30 Vdc,

I_DQA= 800 mA, V_GSB= 0.35 Vdc, P_out= 87 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

2110 MHz

2140 MHz

2170 MHz

2200 MHz

(dB)

14.8

15.3

15.5

(%)

49.5

48.9

48.6

47.9

8.0

7.8

7.7

–30.3

–31.1

–31.3

–32.0

ACP--1230S--4L2S

Features



Advanced high performance in--package Doherty

Designed for wide instantaneous bandwidth applications

Greater negative gate--source voltage range for improved Class C operation

Able to withstand extremely high output VSWR and broadband operating

conditions

Designed for digital predistortion error correction systems

(2)

VBW

Carrier

RF /V

outA DSA

inA GSA

(1)



RF /V

inB GSB

RF /V

outB DSB

Peaking

(2)

VBW

(Top View)

Figure 1. Pin Connections

1. Pin connections 4 and 5 are DC coupled

and RF independent.

2. Device can operate with

current

supplied through pin 3 and pin 6.

 2018 NXP B.V.

A3T21H456W23SR6

RF Device Data

NXP Semiconductors

12 3 4 5 6 7 8

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