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A2F060M3E-FGG256I PDF预览

A2F060M3E-FGG256I

更新时间: 2024-01-26 00:24:14
品牌 Logo 应用领域
美高森美 - MICROSEMI 现场可编程门阵列可编程逻辑
页数 文件大小 规格书
192页 11779K
描述
SmartFusion Customizable System-on-Chip (cSoC)

A2F060M3E-FGG256I 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LBGA, BGA256,16X16,40Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.82
最大时钟频率:80 MHzJESD-30 代码:S-PBGA-B256
JESD-609代码:e1长度:17 mm
湿度敏感等级:3可配置逻辑块数量:1536
等效关口数量:60000输入次数:66
逻辑单元数量:1536输出次数:66
端子数量:256组织:1536 CLBS, 60000 GATES
封装主体材料:PLASTIC/EPOXY封装代码:LBGA
封装等效代码:BGA256,16X16,40封装形状:SQUARE
封装形式:GRID ARRAY, LOW PROFILE峰值回流温度(摄氏度):250
电源:1.5,1.8,2.5,3.3 V可编程逻辑类型:FIELD PROGRAMMABLE GATE ARRAY
认证状态:Not Qualified座面最大高度:1.7 mm
子类别:Field Programmable Gate Arrays最大供电电压:1.575 V
最小供电电压:1.425 V标称供电电压:1.5 V
表面贴装:YES技术:CMOS
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30宽度:17 mm
Base Number Matches:1

A2F060M3E-FGG256I 数据手册

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SmartFusion Customizable System-on-Chip (cSoC)  
devices from the PCB design. Flash-based SmartFusion cSoCs simplify total system design and reduce  
cost and design risk, while increasing system reliability.  
Immunity to Firm Errors  
Firm errors occur most commonly when high-energy neutrons, generated in the atmosphere, strike a  
configuration cell of an SRAM FPGA. The energy of the collision can change the state of the  
configuration cell and thus change the logic, routing, or I/O configuration behavior in an unpredictable  
way.  
Another source of radiation-induced firm errors is alpha particles. For alpha radiation to cause a soft or  
firm error, its source must be in very close proximity to the affected circuit. The alpha source must be in  
the package molding compound or in the die itself. While low-alpha molding compounds are being used  
increasingly, this helps reduce but does not entirely eliminate alpha-induced firm errors.  
Firm errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a  
complete system failure. Firm errors do not occur in SmartFusion cSoCs. Once it is programmed, the  
flash cell configuration element of SmartFusion cSoCs cannot be altered by high energy neutrons and is  
therefore immune to errors from them. Recoverable (or soft) errors occur in the user data SRAMs of all  
FPGA devices. These can easily be mitigated by using error detection and correction (EDAC) circuitry  
built into the FPGA fabric.  
Specifying I/O States During Programming  
You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for  
PDB files generated from Designer v8.5 or greater. See the FlashPro User’s Guide for more information.  
Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have  
limited display of Pin Numbers only.  
The I/Os are controlled by the JTAG Boundary Scan register during programming, except for the analog  
pins (AC, AT and AV). The Boundary Scan register of the AG pin can be used to enable/disable the gate  
driver in software v9.0.  
1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during  
programming.  
2. From the FlashPro GUI, click PDB Configuration. A FlashPoint – Programming File Generator  
window appears.  
3. Click the Specify I/O States During Programming button to display the Specify I/O States During  
Programming dialog box.  
4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header.  
Select the I/Os you wish to modify (Figure 1-1 on page 1-4).  
5. Set the I/O Output State. You can set Basic I/O settings if you want to use the default I/O settings  
for your pins, or use Custom I/O settings to customize the settings for each pin. Basic I/O state  
settings:  
1 – I/O is set to drive out logic High  
0 – I/O is set to drive out logic Low  
Last Known State – I/O is set to the last value that was driven out prior to entering the  
programming mode, and then held at that value during programming  
Z -Tri-State: I/O is tristated  
Revision 10  
1-3  

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