Datasheet > A25S16M8VR-X

A25S16M8VR-X

更新时间： 2022-02-26 12:26:39

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
52页	2819K
描述
MEMORY 16M BIT SPI NOR FLASH

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数据手册

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A25S16M8VR-X 数据手册

A25S16

MEMORY

AiT Semiconductor Inc.

www.ait-ic.com

16M BIT SPI NOR FLASH

Parameter

Output Disable Time

Symbol

Min.

Typ.

Max.

Unit

μs

t_SHQZ

t_CLQX

t_DVCH

t_CHDX

t_HLCH

t_HHCH

t_CHHL

t_CHHH

t_HLQZ

t_HHQX

t_CLQV

t_WHSL

t_SHWL

t_DP

Output Hold Time

Data In Setup Time

Data In Hold Time

/Hold Low Setup Time (relative to Clock)

/Hold High Setup Time (relative to Clock)

/Hold High Hold Time (relative to Clock)

/Hold Low Hold Time (relative to Clock)

/Hold Low To High-Z Output

/Hold Low To Low-Z Output

Clock Low To Output Valid

Write Protect Setup Time Before /CS Low

Write Protect Hold Time After /CS High

/CS High To Deep Power-Down Mode

/CS High To Standby Mode Without

Electronic Signature Read

100

0.1

t_RES1

t_RES2

t_SUS

μs

/CS High To Standby Mode With

Electronic Signature Read

1.5

/CS High To Next Instruction After

Suspend

Write Status Register Cycle Time

Page Programming Time

t_W

t_PP

t_SE

t_BE

t_CE

0.7

15 ^NOTE2

2.4

Sector Erase Time

300

Block Erase Time(32K Bytes/64K Bytes)

0.2/0.3

1/1.2

Chip Erase Time

NOTE1: Tested with clock frequency lower than 50 MHz.

NOTE2: t_Wcan be up to 45 ms at -40℃ during the characterization of the current design. It will be improved in the future design.

REV1.0

- JUN 2015 RELEASED -

- 9 -

1...6 7 8910 11 12...52

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