Datasheet > A25S16M8VR-X

A25S16M8VR-X

更新时间： 2022-02-26 12:26:39

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
52页	2819K
描述
MEMORY 16M BIT SPI NOR FLASH

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A25S16M8VR-X 数据手册

A25S16

MEMORY

AiT Semiconductor Inc.

www.ait-ic.com

16M BIT SPI NOR FLASH

DC ELECTRICAL CHARACTERISTICS

T= -40℃~85℃, V_CC=2.7~3.6V

Parameter

Input Leakage Current

Output Leakage Current

Symbol

I_LI

Conditions

Min.

Typ.

Max.

±2

Unit

μA

I_LO

±2

μA

/CS=V_CC,

Standby Current

I_CC1

μA

V_IN=V_CCor V_SS

/CS=V_CC,

Deep Power-Down Current

I_CC2

V_IN=V_CCor V_SS

Current: Read Single/Dual/Quad

1MHz

3/4/5

3.5/5/6

Current: Read Single/Dual/Quad

33MHz

5/11/19

6.5/16/30

10/33/60

7.5/12/19.5 mA

SCLK=0.1V_CC/

I_CC3

NOTE1

0.9V_CC

Current: Read Single/Dual/Quad

50MHz

9.5/17/33

12/35/65

Current: Read Single/Dual/Quad

108MHz

Operating Current(Page Program)

Operating Current(WRSR)

Operating Current(Block Erase)

Operating Current(Sector Erase)

Operating Current (Chip Erase)

I_CC4

I_CC5

I_CC6

I_CC7

I_CC8

/CS=V_CC

0.2V_CC

Input Low Voltage

V_IL

-0.5

NOTE2

Input High Voltage

Output Low Voltage

V_IH

V_OL

V_OH

0.8V_CC

V_CC+0.4

0.4

I_OL=100μA

I_OH=-100μA

Output High Voltage

V_CC-0.2

NOTE1: I_CC3is measured with ATE loading

NOTE2: Design target is 0.2Vcc. It can be as low as 0.12Vcc during the characterization of the current design. It will be improved in the

future design.

REV1.0

- JUN 2015 RELEASED -

- 7 -

1...4 5 678 9 10...52

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