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A25L20PUQ-UF PDF预览

A25L20PUQ-UF

更新时间: 2024-01-13 17:39:41
品牌 Logo 应用领域
联笙电子 - AMICC 闪存存储内存集成电路光电二极管时钟
页数 文件大小 规格书
43页 544K
描述
2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

A25L20PUQ-UF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:DIP, DIP8,.3Reach Compliance Code:unknown
风险等级:5.62Is Samacsys:N
最大时钟频率 (fCLK):85 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDIP-T8
长度:9.14 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:SERIAL
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:4.57 mm
串行总线类型:SPI最大待机电流:0.00001 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
类型:NOR TYPE宽度:7.62 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

A25L20PUQ-UF 数据手册

 浏览型号A25L20PUQ-UF的Datasheet PDF文件第10页浏览型号A25L20PUQ-UF的Datasheet PDF文件第11页浏览型号A25L20PUQ-UF的Datasheet PDF文件第12页浏览型号A25L20PUQ-UF的Datasheet PDF文件第14页浏览型号A25L20PUQ-UF的Datasheet PDF文件第15页浏览型号A25L20PUQ-UF的Datasheet PDF文件第16页 
A25L20P/A25L10P/A25L05P Series  
Write Enable (WREN)  
The Write Enable (WREN) instruction (Figure 4.) sets the  
Write Enable Latch (WEL) bit.  
The Write Enable Latch (WEL) bit must be set prior to every  
Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and  
Write Status Register (WRSR) instruction.  
The Write Enable (WREN) instruction is entered by driving  
Chip Select ( ) Low, sending the instruction code, and then  
S
driving Chip Select ( ) High.  
S
Figure 4. Write Enable (WREN) Instruction Sequence  
S
0
1
2
3
4
5
6
7
C
Instruction  
DIO  
High Impedance  
DO  
Write Disable (WRDI)  
Power-up  
The Write Disable (WRDI) instruction (Figure 5.) resets the  
Write Disable (WRDI) instruction completion  
Write Status Register (WRSR) instruction completion  
Page Program (PP) instruction completion  
Sector Erase (SE) instruction completion  
Bulk Erase (BE) instruction completion  
Write Enable Latch (WEL) bit.  
The Write Disable (WRDI) instruction is entered by driving Chip  
S
Select ( ) Low, sending the instruction code, and then driving  
Chip The Write Enable Latch (WEL) bit is reset under the  
following conditions:  
Figure 5. Write Disable (WRDI) Instruction Sequence  
S
0
1
2
3
4
5
6
7
C
Instruction  
DIO  
High Impedance  
DO  
(August, 2007, Version 1.0)  
12  
AMIC Technology Corp.  

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