Datasheet > A1F25M12W2-F1

A1F25M12W2-F1

更新时间： 2023-12-20 18:46:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		电源电路
页数	文件大小	规格书
16页	546K
描述
ACEPACK 1电源模块，fourpack拓扑，1200 V，23 mOhm（典型值），SiC MOSFET第二代（配NTC）

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A1F25M12W2-F1 数据手册

A1F25M12W2-F1

Electrical characteristics (curves)

Figure 7. Typical switching energy vs drain current

(T_J= 25 °C)

Figure 8. Typical switching energy vs drain current

(T_J= 150 °C)

GADG030420231138SDC_25

GADG030420231135SDC

(mJ)

0.9

(mJ)

V_DD= 600 V,

_g(on)= 4.7 Ω,

R_g(off)= 1 Ω,

V_DD= 600 V, R_g(on)= 4.7 Ω,R_g(off)= 1 Ω,

VGS = -5 to 18 V,TJ = 150 ℃

VGS = -5 to 18 V

1.0

0.8

0.7

E_on

0.6

0.8

0.6

0.4

E_on

0.5

0.4

0.3

0.2

0.0

E_off

0.1

0.0

I_D(A)

Figure 9. Typical switching energy vs gate resistance

(T_J= 25 °C)

Figure 10. Typical switching energy vs gate resistance

(T_J= 150 °C)

GADG030420231140SLG_25

GADG030420231139SLG_150

I = 50 A,

VGS = -5 to 18 V, TJ = 150 ℃

(mJ)

V_DD= 600 V,

VGS = -5 to 18 V

I = 50 A,

V_DD= 600 V,

0.75

E_on

0.50

0.25

0.00

0.25

0.00

E_off

R_G(Ω)

Figure 12. Typical switching energy vs V_GS(T_J= 25 °C)

Figure 11. Typical switching energy vs temperature

GADG030420231141SLT

GADG030420231143SLV_25

(mJ)

= 50 A,

(mJ)

I = 50 A,

V_DD= 600 V,

VGS = -5 to 18 V,

R_g(on)= 4.7 Ω, R_g(off)= 1 Ω

R_g(on)= 4.7 Ω,R_g(off)= 1 Ω

0.75

0.50

E_on

0.50

0.25

0.00

0.25

0.00

E_off

75 100 125 150 T_J(°C)

-5

-4

-3

-2

-1

V_GS(V)

DS13470 - Rev 4

page 6/16

1...3 4 567 8 9...16

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