生命周期: | Obsolete | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-W3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.82 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 0.3 A |
最大漏源导通电阻: | 5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-226AA | JESD-30 代码: | O-PBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7000/D | ETC | Small Signal MOSFET 200 mAmps, 60 Volts |
获取价格 |
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2N7000/D10Z | TI | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
获取价格 |
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2N7000/D11Z | TI | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
获取价格 |
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2N7000/D27Z | TI | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
获取价格 |
|
2N7000/D29Z | TI | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
获取价格 |
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2N7000/D74Z | TI | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
获取价格 |