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93LC56T-I/SL PDF预览

93LC56T-I/SL

更新时间: 2024-11-18 21:16:47
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
12页 102K
描述
256 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO14, 0.107 INCH, PLASTIC, SOIC-14

93LC56T-I/SL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP14,.25
针数:14Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.54其他特性:100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS
备用内存宽度:16最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:200耐久性:10000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G14JESD-609代码:e0
长度:8.65 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:14
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大待机电流:0.00003 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

93LC56T-I/SL 数据手册

 浏览型号93LC56T-I/SL的Datasheet PDF文件第2页浏览型号93LC56T-I/SL的Datasheet PDF文件第3页浏览型号93LC56T-I/SL的Datasheet PDF文件第4页浏览型号93LC56T-I/SL的Datasheet PDF文件第5页浏览型号93LC56T-I/SL的Datasheet PDF文件第6页浏览型号93LC56T-I/SL的Datasheet PDF文件第7页 
M
93LC46/56/66  
®
1K/2K/4K 2.0V Microwire Serial EEPROM  
FEATURES  
BLOCK DIAGRAM  
VCC  
VSS  
• Single supply with programming operation down  
to 2.0V (Commercial only)  
• Low power CMOS technology  
- 1 mA active current typical  
ADDRESS  
DECODER  
MEMORY  
ARRAY  
- 5 µA standby current (typical) at 3.0V  
• ORG pin selectable memory configuration  
- 128 x 8 or 64 x 16-bit organization (93LC46)  
- 256 x 8 or 128 x 16-bit organization(93LC56)  
- 512 x 8 or 256 x 16-bit organization(93LC66)  
• Self-timed ERASE and WRITE cycles  
(including auto-erase)  
ADDRESS  
COUNTER  
OUTPUT  
BUFFER  
DATA REGISTER  
DO  
DI  
• Automatic ERAL before WRAL  
MODE  
DECODE  
LOGIC  
• Power on/off data protection circuitry  
• Industry standard 3-wire serial I/O  
• Device status signal during ERASE/WRITE cycles  
• Sequential READ function  
• 10,000,000 ERASE/WRITE cycles guaranteed on  
93LC56 and 93LC66  
CS  
CLOCK  
GENERATOR  
CLK  
• 1,000,000 E/W cycles guaranteed on 93LC46  
• Data retention > 200 years  
DESCRIPTION  
• 8-pin PDIP/SOIC and 14-pin SOIC package  
(SOIC in JEDEC and EIAJ standards)  
Temperature ranges supported  
The Microchip Technology Inc. 93LC46/56/66 are 1K,  
2K, and 4K low-voltage serial Electrically Erasable  
PROMs.The device memory is configured as x8 or x16  
bits, depending on the ORG pin setup. Advanced  
CMOS technology makes these devices ideal for  
low-power, nonvolatile memory applications. The  
93LC46/56/66 is available in standard 8-pin DIP and 8/  
14-pin surface mount SOIC packages. The 93LC46X/  
56X/66X are only offered in an “SN” package.  
- Commercial (C):  
- Industrial (I):  
0°C to +70°C  
-40°C to +85°C  
PACKAGE TYPES  
SOIC  
1
2
3
4
14  
13  
12  
11  
NC  
Vcc  
NU  
NC  
CS  
DIP  
SOIC  
SOIC  
CLK  
NC  
DI  
1
8
CS  
CLK  
DI  
VCC  
NU  
1
8
7
6
5
1
2
3
4
8
7
6
5
ORG  
VSS  
DO  
DI  
VCC  
NU  
NU  
VCC  
CS  
CS  
NC  
ORG  
VSS  
2
3
4
7
6
5
2
5
6
7
10  
9
CLK  
3
ORG  
VSS  
ORG  
VSS  
DO  
NC  
DI  
8
4
DO  
CLK  
DO  
NC  
1997 Microchip Technology Inc.  
DS11168L-page 1  

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