Datasheet > 935354511128

935354511128

更新时间： 2024-11-25 14:47:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	396K
描述
RF Power Field-Effect Transistor

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935354511128 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

935354511128 数据手册

Document Number: A3T21H360W23S

Rev. 0, 08/2017

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 56 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications requiring very wide instantaneous

bandwidth capability covering the frequency range of 2110 to 2200 MHz.

A3T21H360W23SR6

2100 MHz

2110–2200 MHz, 56 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

I_DQA= 600 mA, V_GSB= 0.6 Vdc, P_out= 56 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

2110 MHz

2140 MHz

2170 MHz

2200 MHz

(dB)

16.4

16.6

16.7

16.5

(%)

52.0

51.7

50.7

49.6

7.7

7.6

7.3

7.2

–29.3

–30.2

–30.7

–31.1

Features

ACP--1230S--4L2S



Advanced high performance in--package Doherty

Designed for wide instantaneous bandwidth applications

Greater negative gate--source voltage range for improved Class C operation

Able to withstand extremely high output VSWR and broadband operating

conditions

(2)

VBW

Carrier



Designed for digital predistortion error correction systems

RF /V

outA DSA

inA GSA

(1)

RF /V

inB GSB

RF /V

outB DSB

Peaking

(2)

VBW

(Top View)

Figure 1. Pin Connections

1. Pin connections 4 and 5 are DC coupled

and RF independent.

2. Device can operate with

current

supplied through pin 3 and pin 6.

 2017 NXP B.V.

A3T21H360W23SR6

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...16

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