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933709010127 PDF预览

933709010127

更新时间: 2024-11-16 19:53:07
品牌 Logo 应用领域
恩智浦 - NXP 超快软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
5页 46K
描述
DIODE 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, SC-46, 3 PIN, Rectifier Diode

933709010127 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.10.00.80
风险等级:5.48应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:132 A元件数量:2
相数:1端子数量:3
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.06 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

933709010127 数据手册

 浏览型号933709010127的Datasheet PDF文件第2页浏览型号933709010127的Datasheet PDF文件第3页浏览型号933709010127的Datasheet PDF文件第4页浏览型号933709010127的Datasheet PDF文件第5页 
Philips Semiconductors  
Product specification  
Dual rectifier diodes  
ultrafast  
BYV34 series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Low thermal resistance  
VR = 300 V/ 400 V/ 500 V  
a1  
1
a2  
3
VF 1.05 V  
IO(AV) = 20 A  
trr 60 ns  
k
2
GENERAL DESCRIPTION  
PINNING  
SOT78 (TO220AB)  
Dual, common cathode, ultra-fast,  
epitaxial rectifier diodes intended  
for use as output rectifiers in high  
frequency switched mode power  
supplies.  
PIN  
DESCRIPTION  
anode 1  
cathode  
tab  
1
2
The BYV34 series is supplied in the  
3
anode 2  
cathode  
conventional  
leaded  
SOT78  
(TO220AB) package.  
tab  
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BYV34  
-300  
300  
300  
300  
-400  
400  
400  
400  
-500  
500  
500  
500  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
Tmb 138˚C  
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave; δ = 0.5;  
-
20  
A
(both diodes conducting)1  
Tmb 115 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
20  
A
per diode  
Non-repetitive peak forward  
current per diode.  
Tmb 115 ˚C  
t = 10 ms  
-
-
120  
132  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRRM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to per diode  
-
-
-
-
-
60  
2.4  
1.6  
-
K/W  
K/W  
K/W  
heatsink  
both diodes conducting  
Rth j-a  
Thermal resistance junction to in free air.  
ambient  
1 Neglecting switching and reverse current losses  
October 1998  
1
Rev 1.400  

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