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8EWF02STRPBF PDF预览

8EWF02STRPBF

更新时间: 2024-11-07 08:11:43
品牌 Logo 应用领域
威世 - VISHAY 整流二极管软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 238K
描述
Surface Mountable Fast Soft Recovery Diode, 8 A

8EWF02STRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.22
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.14 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

8EWF02STRPBF 数据手册

 浏览型号8EWF02STRPBF的Datasheet PDF文件第2页浏览型号8EWF02STRPBF的Datasheet PDF文件第3页浏览型号8EWF02STRPBF的Datasheet PDF文件第4页浏览型号8EWF02STRPBF的Datasheet PDF文件第5页浏览型号8EWF02STRPBF的Datasheet PDF文件第6页浏览型号8EWF02STRPBF的Datasheet PDF文件第7页 
8EWF..SPbF Soft Recovery Series  
Vishay High Power Products  
Surface Mountable  
Fast Soft Recovery Diode, 8 A  
FEATURES/DESCRIPTION  
Base  
common  
cathode  
+
The 8EWF..SPbF fast soft recovery rectifier series  
has been optimized for combined short reverse  
recovery time, low forward voltage drop and low  
leakage current.  
2
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
This series is designed and qualified for industrial level.  
Compliant to RoHS directive 2002/95/EC.  
1
3
D-PAK  
-
-
Anode  
Anode  
APPLICATIONS  
PRODUCT SUMMARY  
• Output rectification and freewheeling diode in inverters,  
choppers and converters  
VF at 8 A  
< 1.2 V  
55 ns  
trr  
• Input rectifications where severe restrictions on conducted  
EMI should be met  
VRRM  
200 to 600 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
8
200 to 600  
170  
A
V
A
8 A, TJ = 25 °C  
1 A, 100 A/µs  
Range  
1.2  
V
trr  
55  
ns  
°C  
TJ  
- 40 to 150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
V
RSM, MAXIMUM NON-REPETITIVE  
PEAK REVERSE VOLTAGE  
V
IRRM  
AT 150 °C  
mA  
PART NUMBER  
8EWF02SPbF  
8EWF04SPbF  
8EWF06SPbF  
200  
400  
600  
300  
500  
700  
3
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
8
UNITS  
Maximum average forward current  
IF(AV)  
TC = 96 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
170  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
200  
140  
Maximum I2t for fusing  
I2t  
A2s  
200  
Maximum I2t for fusing  
I2t  
2000  
A2s  
Document Number: 94108  
Revision: 01-Jul-09  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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