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841N254AKIT PDF预览

841N254AKIT

更新时间: 2024-02-09 17:44:50
品牌 Logo 应用领域
艾迪悌 - IDT 时钟
页数 文件大小 规格书
23页 480K
描述
FEMTOCLOCK? NG Crystal-to-LVDS/HCSL Clock Synthesizer

841N254AKIT 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:VFQFPN
包装说明:HVQCCN,针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.33
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/1912205.2.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=1912205
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=19122053D View:https://componentsearchengine.com/viewer/3D.php?partID=1912205
Samacsys PartID:1912205Samacsys Image:https://componentsearchengine.com/Images/9/841N254BKILFT.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/841N254BKILFT.jpgSamacsys Pin Count:33
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Quad Flat No-Lead
Samacsys Footprint Name:NLG32P1Samacsys Released Date:2020-01-19 15:35:53
Is Samacsys:N其他特性:ALSO OPERATES AT 3.3 V SUPPLY
JESD-30 代码:S-XQCC-N32JESD-609代码:e3
长度:5 mm湿度敏感等级:3
端子数量:32最高工作温度:85 °C
最低工作温度:-40 °C最大输出时钟频率:250 MHz
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260主时钟/晶体标称频率:25 MHz
座面最大高度:1 mm最大供电电压:2.625 V
最小供电电压:2.375 V标称供电电压:2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5 mmuPs/uCs/外围集成电路类型:CLOCK GENERATOR, OTHER
Base Number Matches:1

841N254AKIT 数据手册

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ICS841N254I Data Sheet  
FEMTOCLOCK® NG CRYSTAL-TO-LVDS/HCSL CLOCK SYNTHESIZER  
NOTE: Characterized using a 25MHz crystal.  
NOTE 1: Please refer to the phase noise plots.  
NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the output differential  
cross points.  
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 4: Defined as skew within a bank of outputs at the same voltage and with equal load conditions.  
NOTE 5: Measurement taken from differential waveform.  
NOTE 6: TSTABLE is the time the differential clock must maintain a minimum 150mV differential voltage after rising/falling edges before it is  
allowed to drop back into the VRB 100mV differential range.  
NOTE 7: Measurement taken from single ended waveform.  
NOTE 8: Defined as the maximum instantaneous voltage including overshoot. See Parameter Measurement Information Section.  
NOTE 9: Defined as the minimum instantaneous voltage including undershoot. See Parameter Measurement Information Section.  
NOTE 10: Measured at crossing point where the instantaneous voltage value of the rising edge of Q equals the falling edge of nQ.  
See Parameter Measurement Information Section.  
NOTE 11: Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing  
points for this measurement. See Parameter Measurement Information Section.  
NOTE 12: Defined as the total variation of all crossing voltage of rising Q and falling nQ. This is the maximum allowed variance in the VCROSS  
for any particular system. See Parameter Measurement Information Section.  
NOTE 13: Measured from -150mV to +150mV on the differential waveform (derived from Q minus nQ). The signal must be monotonic through  
the measurement region for rise and fall time. The 300mV measurement window is centered on the differential zero crossing.  
ICS841N254AKI REVISION A APRIL 18, 2011  
7
©2011 Integrated Device Technology, Inc.  

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