Datasheet > 80EBU02_11

80EBU02_11

更新时间： 2022-09-26 14:30:41

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
8页	135K
描述
Ultrafast Soft Recovery Diode, 80 A FRED Pt

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80EBU02_11 数据手册

VS-80EBU02

Vishay Semiconductors

www.vishay.com

V_R= 200 V

0.01 Ω

L = 70 μH

D.U.T.

dI_F/dt

adjust

IRFP250

Fig. 9 - Reverse Recovery Parameter Test Circuit

(3)

t_rr

I_F

t_a

t_b

(4)

Q_rr

(2)

I_RRM

0.5 I_RRM

(5)

dI_(rec)M/dt

0.75 I_RRM

dI_F/dt

(1)

(4) Q_rr- area under curve deﬁned by t_rr

(1) dI_F/dt - rate of change of current

and I_RRM

through zero crossing

t_rrx I_RRM

(2) I_RRM- peak reverse recovery current

Q_rr

(3) t_rr- reverse recovery time measured

from zero crossing point of negative

going I_Fto point where a line passing

through 0.75 I_RRMand 0.50 I_RRM

extrapolated to zero current.

(5) dI_(rec)M/dt - peak rate of change of

current during t_bportion of t_rr

Fig. 10 - Reverse Recovery Waveform and Definitions

Revision: 15-Jun-11

Document Number: 93024

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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