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80EBU04 PDF预览

80EBU04

更新时间: 2024-02-22 17:28:56
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
7页 117K
描述
Ultrafast Soft Recovery Diode, 80 A FRED PTTM

80EBU04 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:R-PSFM-X1针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.46
应用:ULTRA FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSFM-X1
最大非重复峰值正向电流:800 A元件数量:1
相数:1端子数量:1
最大输出电流:80 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大反向恢复时间:0.06 µs表面贴装:NO
端子形式:UNSPECIFIED端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

80EBU04 数据手册

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80EBU04  
Vishay High Power Products  
Ultrafast Soft Recovery Diode,  
80 A FRED PTTM  
FEATURES  
• Ultrafast recovery  
• 175 °C operating junction temperature  
RoHS  
• Screw mounting only  
COMPLIANT  
• Lead (Pb)-free plating  
Cathode  
Anode  
• Designed and qualified for industrial level  
BENEFITS  
PowerTabTM  
• Reduced RFI and EMI  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
PRODUCT SUMMARY  
DESCRIPTION/APPLICATIONS  
These diodes are optimized to reduce losses and EMI/RFI in  
high frequency power conditioning systems.  
trr (typical)  
50 ns  
80 A  
IF(AV)  
The softness of the recovery eliminates the need for a  
snubber in most applications. These devices are ideally  
suited for HF welding, power converters and other  
applications where switching losses are not significant  
portion of the total losses.  
VR  
400 V  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
400  
80  
UNITS  
Cathode to anode voltage  
Continuous forward current  
Single pulse forward current  
Maximum repetitive forward current  
VR  
V
IF(AV)  
IFSM  
TC = 101 °C  
TC = 25 °C  
Square wave, 20 kHz  
800  
160  
A
IFRM  
Operating junction and  
storage temperatures  
TJ, TStg  
- 55 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
Vr  
,
IR = 100 µA  
IF = 80 A  
400  
-
-
-
-
1.1  
0.92  
0.98  
-
1.3  
V
Forward voltage  
VF  
I
F = 80 A, TJ = 175 °C  
1.08  
IF = 80 A, TJ = 125 °C  
1.15  
VR = VR rated  
-
-
-
-
50  
2
-
µA  
mA  
pF  
Reverse leakage current  
IR  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
Junction capacitance  
Series inductance  
CT  
LS  
50  
Measured lead to lead 5 mm from package body  
3.5  
-
nH  
Document Number: 93025  
Revision: 30-Oct-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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