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8050SL-E-T92-R PDF预览

8050SL-E-T92-R

更新时间: 2024-01-15 07:11:49
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
4页 196K
描述
Small Signal Bipolar Transistor, 0.7A I(C), NPN

8050SL-E-T92-R 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.62
最大集电极电流 (IC):0.7 A配置:Single
最小直流电流增益 (hFE):280最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):100 MHzBase Number Matches:1

8050SL-E-T92-R 数据手册

 浏览型号8050SL-E-T92-R的Datasheet PDF文件第1页浏览型号8050SL-E-T92-R的Datasheet PDF文件第3页浏览型号8050SL-E-T92-R的Datasheet PDF文件第4页 
8050S  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
30  
20  
V
5
700  
V
mA  
mW  
W
SOT-23  
TO-92  
350  
Collector Dissipation(TA=25°C)  
PC  
1
Junction Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +150  
°C  
°C  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
BVCBO IC = 100μA, IE = 0  
BVCEO IC = 1mA, IB = 0  
BVEBO IE = 100μA, IC =0  
30  
20  
5
V
V
V
ICBO  
IEBO  
hFE1  
hFE2  
hFE3  
VCB = 30V,IE = 0  
1
uA  
nA  
Emitter Cut-Off Current  
VEB = 5V, IC = 0  
100  
VCE = 1V, IC = 1mA  
VCE = 1V, IC = 150 mA  
VCE = 1V, IC = 500mA  
100  
120  
40  
DC Current Gain (note)  
400  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
VCE(SAT) IC = 500mA, IB = 50mA  
VBE(SAT) IC = 500mA, IB = 50mA  
VBE(SAT) VCE = 1V, IC = 10mA  
0.5  
1.2  
1.0  
V
V
V
fT  
VCE = 10V, IC = 50mA  
100  
MHz  
pF  
Cob  
VCB = 10V, IE = 0, f = 1MHz  
9.0  
CLASSIFICATION OF hFE2  
RANK  
C
D
E
RANGE  
120-200  
160-300  
280-400  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R206-001.G  
www.unisonic.com.tw  

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