Datasheet > 80-M2122PA200SC01-K709F42

80-M2122PA200SC01-K709F42

更新时间： 2023-09-03 20:38:58

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	6960K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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中文翻译

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数据手册

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80-M2122PA200SC01-K709F42

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Half-Bridge Switch

V_CES

Collector-emitter voltage

1200

247

600

679

±20

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

V_GES

Gate-emitter voltage

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 800 V

µs

°C

T_jmax

Maximum junction temperature

175

Half-Bridge Diode

V_RRM

Peak repetitive reverse voltage

1200

159

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

1100

6052

380

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

175

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

V_isol

DC Test Voltage*

t_p= 2 s

5500

2500

Isolation voltage

AC Voltage

With std lid

t_p= 1 min

Creepage distance

Clearance

For more informations see handling

instructions

6,3

With std lid

For more informations see handling

instructions

6,3

Comparative Tracking Index

*100 % tested in production

CTI

≥ 600

22 Jul. 2021 / Revision 1

123 4 5 6 7...18

中文翻译

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