Datasheet > 80-M2122PA200SC01-K709F42

80-M2122PA200SC01-K709F42

更新时间： 2023-09-03 20:38:58

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	6960K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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80-M2122PA200SC01-K709F42

datasheet

Half-Bridge Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

600

500

V_GE

7 V

8 V

500

400

300

200

100

9 V

400

300

200

100

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

_CE(V)

V_CE(V)

t_p

250

μs

250

150

μs

°C

25 °C

V_GE

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

200

-1

150

100

-2

0,5

0,2

0,1

-3

0,05

0,02

0,01

0,005

-4

0,0

-5

-4

-3

-2

-1

2,5

5,0

7,5

10,0

12,5

t_p(s)

_GE(V)

t_p

250

μs

D =

t_p/ T

0,14

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

3,05E-02

3,53E-02

5,98E-02

8,25E-03

6,13E-03

2,02E+00

3,53E-01

6,95E-02

4,84E-03

5,80E-04

22 Jul. 2021 / Revision 1

1...3 4 567 8 9...18

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