Datasheet > 7MBP75RTB-060

7MBP75RTB-060

更新时间： 2022-11-26 02:55:11

品牌	Logo	应用领域
富士电机 - FUJI		双极性晶体管
页数	文件大小	规格书
23页	960K
描述
IGBT - IPM

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中文翻译

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数据手册

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7MBP75RTB-060 数据手册

Ｖｉｎ（ｔｈ）

Ｏｎ

Ｖｉｎ

Ｉｃ

Ｖｉｎ（ｔｈ）

ｔｒｒ

９０％

５０％

９０％

ｔｏｎ

1０％

ｔｏff

Figure 1. Switching Time Waveform Definitions

off

/Vin

Vge (Inside IPM)

Fault (Inside IPM)

/ALM

Gate On

Gate Off

normal

alarm

2ms(typ.)

tALM＞Max.

tALM

①

②

③

Fault：Over-current,Over-heat or Under-voltage

Figure 2. Input/Output Timing Diagram

Necessary conditions for alarm reset (refer to ① to ③ in figure2.)

① This represents the case when a failure-causing Fault lasts for a period more than tALM.

The alarm resets when the input Vin is OFF and the Fault has disappeared.

② This represents the case when the ON condition of the input Vin lasts for a period more

than tALM. The alarm resets when the Vin turns OFF under no Fault conditions.

③ This represents the case when the Fault disappears and the Vin turns OFF within tALM.

The alarm resets after lasting for a period of the specified time tALM.

off

/Vin

Ioc

alarm

tdoc

/ALM

①

②

＜tdoc

Figure 3. Over-current Protection Timing Diagram

Period ①:

Period ②:

When a collector current over the OC level flows and the OFF command is input within

a period less than the trip delay time tdoc, the current is hard-interrupted and no alarm

is output.

When a collector current over the OC level flows for a period more than the trip delay

time tdoc, the current is soft-interrupted. If this is detected at the lower arm IGBTs,

an alarm is output.

MS6M 0653

H04-004-03

1...6 7 8910 11 12...23

中文翻译

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