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7MBP75RTB-060 PDF预览

7MBP75RTB-060

更新时间: 2022-11-26 02:55:11
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
23页 960K
描述
IGBT - IPM

7MBP75RTB-060 数据手册

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4Absolute Maximum Ratings  
Tc25unless otherwise specified.  
Items  
Symbol  
VDC  
VDC(surge)  
Vsc  
Vces  
Ic  
Min.  
0
0
200  
0
-
-
-
Max.  
450  
500  
400  
600  
75  
150  
75  
198  
50  
Units  
V
V
V
V
A
A
A
W
A
DC  
Bus Voltage  
Surge  
(between terminal P and N)  
Shortoperating  
Collector-Emitter Voltage *1  
Collector Current  
DC  
1ms  
Duty=75.0 % *2  
One transistor *3  
DC  
Icp  
-Ic  
Pc  
Ic  
Collector Power Dissipation  
Collector Current  
-
-
1ms  
Icp  
IF  
-
-
100  
50  
A
A
Forward Current of Diode  
Collector Power Dissipation  
Supply Voltage of Pre-Driver *4  
Input Signal Voltage *5  
Input Signal Current  
Alarm Signal Voltage *6  
Alarm Signal Current *7  
Junction Temperature  
One transistor *3  
Pc  
Vcc  
Vin  
-
198  
20  
Vcc+0.5  
3
W
V
V
mA  
V
mA  
-0.5  
-0.5  
-
-0.5  
-
Iin  
VALM  
ALM  
Tj  
Topr  
Tstg  
Vcc  
20  
150  
100  
125  
-
-20  
-40  
Operating Case Temperature  
Storage Temperature  
Isolating Voltage  
(Terminal to base, 50/60Hz sine wave 1min.) *8  
Screw Torque  
Viso  
-
-
-
AC2500  
3.5  
V
Terminal(M5)  
Mounting(M5)  
Nm  
Note  
*1 Vces shall be applied to the input voltage between terminal P and U or or W or DB, N and U  
or V or W or DB  
*2 125/FWD Rth(j-c)/(Ic×VF MAX)=125/0.855/(75×2.6)×100=75.0%  
*3 Pc=125/IGBT Rth(j-c)=125/0.63=198W [Inverter]  
Pc=125/IGBT Rth(j-c)=125/0.63=198W [Break]  
*4 VCC shall be applied to the input voltage between terminal No.3 and 1,6 and 4, 9 and 7,  
11 and 10.  
*5 Vin shall be applied to the input voltage between terminal No.2 and 1, 5 and 4, 8 and 7,  
13,14,15 and 10.  
*6 : VALM shall be applied to the voltage between terminal No.16 and 10.  
*7 : IALM shall be applied to the input current to terminal No.16.  
*8 50Hz/60Hz sine wave 1 minute.  
a
6
MS6M 0653  
23  
H04-004-03  

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