Datasheet > 7MBP100VDN060-50

7MBP100VDN060-50

更新时间： 2024-03-03 10:10:55

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
11页	2296K
描述
IPM(Inv.+Gate Driver) P630

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中文翻译

获取价格

数据手册

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7MBP100VDN060-50 数据手册

7MBP100VDN060-50

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Collector current vs. Collector-Emitter voltage

=25 [Chip] (typ.)

Collector current vs. Collector-Emitter voltage

℃

Tj=25℃[Terminal] (typ.)

100

CC=15V

CC=17V

CC=13V

0.5

1.5

2.5

3.5

0.5

1.5

2.5

3.5

Collector-Emitter voltage

： VCE [ V ]

Collector-Emitter voltage

： VCE [ V ]

Collector current vs. Collector-Emitter voltage

=125 [Chip] (typ.)

Collector current vs. Collector-Emitter voltage

=125 [Terminal] (typ.)

℃

100

CC=15V

VCC=17V

CC=13V

0.5

1.5

2.5

3.5

0.5

1.5

2.5

Collector-Emitter voltage

： VCE [ V ]

Collector-Emitter voltage

： VCE [ V ]

Forward current vs. Forward voltage

[Chip] (typ.)

Forward current vs. Forward voltage

[Terminal] (typ.)

100

=125

℃

=25℃

=125

℃

Tj=25℃

0.5

1.5

2.5

3.5

0.5

1.5

2.5

Forward voltage

：

[ V ]

Forward voltage

：

VF [ V ]

1...5 6 789 10 11

中文翻译

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