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7MBP100VDN060-50 PDF预览

7MBP100VDN060-50

更新时间: 2024-03-03 10:10:55
品牌 Logo 应用领域
富士电机 - FUJI
页数 文件大小 规格书
11页 2296K
描述
IPM(Inv.+Gate Driver) P630

7MBP100VDN060-50 数据手册

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7MBP100VDN060-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Switching Loss vs. Collector Current (typ.)  
Switching Loss vs. Collector Current (typ.)  
V
DC=300V,VCC=15V,T  
j
=25  
V
DC=300V,VCC=15V,T  
j
=125℃  
10  
8
10  
8
E
on  
E
E
on  
6
6
E
E
off  
4
4
off  
2
2
rr  
E
rr  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
Collector current I [ A ]  
C
Collector current I [ A ]  
C
Transient thermal resistance (max.)  
Reversed biased safe operating area  
cc=15V,T125℃  
V
j
400  
300  
200  
100  
0
10  
1
FWD  
IGBT  
0.1  
RBSOA  
(Repetitive pulse)  
0.01  
0
200  
400  
600  
800  
0.001  
0.01  
0.1  
1
10  
Pulse width P [ sec ]  
W
Collector-Emitter voltage VCE [ V ]  
Power derating for IGBT (max.)  
[per device]  
Power derating for FWD (max.)  
[per device]  
500  
500  
400  
300  
200  
100  
0
400  
300  
200  
100  
0
0
20 40 60 80 100 120 140 160  
0
20 40 60 80 100 120 140 160  
Case Temperature T [ ]  
C
Case Temperature T [ ]  
C
6

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