Datasheet > 7C1351-50

7C1351-50

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
13页	185K
描述
128Kx36 Flow-Through SRAM with NoBL TM Architecture

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7C1351-50 数据手册

CY7C1351

Capacitance^[10]

Parameter

Description

Input Capacitance

Test Conditions

T = 25°C, f = 1 MHz,

Max.

Unit

= 3.3V

Clock Input Capacitance

Input/Output Capacitance

CLK

I/O

DDQ

AC Test Loads and Waveforms

R=317

Ω

3.3V

OUTPUT

ALL INPUT PULSES

Z =50

Ω

3.0V

=50

Ω

5 pF

R=351

Ω

GND

V = 1.5V

INCLUDING

JIG AND

SCOPE

1351-2

(a)

(b)

1351-3

Thermal Resistance

Description

Test Conditions

Symbol

TQFP Typ.

Units

Notes

Thermal Resistance

(Junction to Ambient)

Still Air, soldered on a 4.25 x 1.125 inch,

4-layer printed circuit board

°C/W

Thermal Resistance

(Junction to Case)

°C/W

Note:

10. Tested initially and after any design or process change that may affect these parameters.

1...5 6 789 10 11...13

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