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74LVC1GX04GV-Q100,125 PDF预览

74LVC1GX04GV-Q100,125

更新时间: 2024-09-28 14:51:15
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管逻辑集成电路
页数 文件大小 规格书
18页 121K
描述
Inverter/Buffer, LVC/LCX/Z Series, 1-Func, 1-Input, CMOS, PDSO6

74LVC1GX04GV-Q100,125 技术参数

生命周期:Active包装说明:TSOP,
Reach Compliance Code:unknown风险等级:5.66
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G6
长度:2.9 mm逻辑集成电路类型:INVERTER/BUFFER
功能数量:1输入次数:1
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE传播延迟(tpd):12.5 ns
筛选级别:AEC-Q100座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL宽度:1.5 mm
Base Number Matches:1

74LVC1GX04GV-Q100,125 数据手册

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74LVC1GX04-Q100  
X-tal driver  
Rev. 1 — 25 September 2013  
Product data sheet  
1. General description  
The 74LVC1GX04-Q100 combines the functions of the 74LVC1GU04-Q100 and  
74LVC1G04-Q100 to provide a device optimized for use in crystal oscillator applications.  
The integration of the two devices into the 74LVC1GX04-Q100 produces the benefits of a  
compact footprint. It provides lower power dissipation and stable operation over a wide  
frequency and temperature range.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this  
device in a mixed 3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant input and a 5 V overvoltage tolerant powered down output  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8B/JESD36 (2.7 V to 3.6 V)  
24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Multiple package options  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  

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