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74AUP1G126 PDF预览

74AUP1G126

更新时间: 2024-01-02 08:49:03
品牌 Logo 应用领域
美台 - DIODES 输出元件
页数 文件大小 规格书
13页 214K
描述
SINGLE BUFFER GATE WITH 3-STATE OUTPUT

74AUP1G126 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TSSOP,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.17系列:AUP/ULP/V
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
长度:2.05 mm逻辑集成电路类型:BUS DRIVER
湿度敏感等级:1位数:1
功能数量:1端口数量:2
端子数量:5最高工作温度:125 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
传播延迟(tpd):24 ns认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1.25 mmBase Number Matches:1

74AUP1G126 数据手册

 浏览型号74AUP1G126的Datasheet PDF文件第5页浏览型号74AUP1G126的Datasheet PDF文件第6页浏览型号74AUP1G126的Datasheet PDF文件第7页浏览型号74AUP1G126的Datasheet PDF文件第9页浏览型号74AUP1G126的Datasheet PDF文件第10页浏览型号74AUP1G126的Datasheet PDF文件第11页 
74AUP1G126  
Operating and Package Characteristics (@TA = +25°C, unless otherwise specified.)  
Parameter  
Test Conditions  
Typ  
6.9  
Unit  
VCC  
0.8V  
1.2V ± 0.1V  
1.5V ± 0.1V  
1.8V ± 0.15V  
2.5V ± 0.2V  
3.3V ± 0.3V  
0 or 3.3V  
6.7  
6.6  
Power Dissipation  
Capacitance  
f = 1MHz  
No Load  
pF  
Cpd  
6.5  
6.4  
6.3  
Input Capacitance  
1.5  
pF  
Ci  
Vi = VCC or GND  
SOT353  
371  
430  
445  
143  
190  
250  
Thermal Resistance  
Junction-to-Ambient  
X2-DFN1410-6  
X2-DFN1010-6  
SOT353  
(Note 6)  
(Note 6  
°C/W  
θJA  
Thermal Resistance  
Junction-to-Case  
X2-DFN1410-6  
X2-DFN1010-6  
°C/W  
θJC  
Notes:  
6. Test condition for SOT353, DFN1410, and DFN1010 devices mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad  
layout.  
8 of 13  
www.diodes.com  
August 2012  
© Diodes Incorporated  
74AUP1G126  
Document number: DS35158 Rev. 1 - 2  

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