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74AUP1G0832GS PDF预览

74AUP1G0832GS

更新时间: 2024-02-05 23:08:41
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
19页 71K
描述
AUP/ULP/V SERIES, 3-INPUT AND-OR GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, 0.35 MM PITCH, SOT-1202, SON-6

74AUP1G0832GS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-363
包装说明:PLASTIC, SOT-363, SC-88, 6 PIN针数:6
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.33Is Samacsys:N
系列:AUP/ULP/VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2 mm
负载电容(CL):30 pF逻辑集成电路类型:AND-OR GATE
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:1.2/3.3 VProp。Delay @ Nom-Sup:21.8 ns
传播延迟(tpd):21.8 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1.25 mmBase Number Matches:1

74AUP1G0832GS 数据手册

 浏览型号74AUP1G0832GS的Datasheet PDF文件第2页浏览型号74AUP1G0832GS的Datasheet PDF文件第3页浏览型号74AUP1G0832GS的Datasheet PDF文件第4页浏览型号74AUP1G0832GS的Datasheet PDF文件第6页浏览型号74AUP1G0832GS的Datasheet PDF文件第7页浏览型号74AUP1G0832GS的Datasheet PDF文件第8页 
74AUP1G0832  
Philips Semiconductors  
Low-power 3-input AND-OR gate  
V
CC  
A
B
B
C
1
2
3
6
5
4
1
2
3
6
5
4
C
Y
A
B
Y
V
Y
CC  
B
Y
001aad944  
001aad945  
Fig 5. 2-input AND gate  
Fig 6. 2-input OR gate  
V
V
CC  
A
CC  
A
C
B
Y
C
1
2
3
6
5
4
1
2
3
6
5
4
C
C
Y
A
A
Y
B
Y
001aad946  
001aad947  
Fig 7. 2-input OR gate  
Fig 8. 3-input gate with the Boolean  
function: Y = (A × B) + C  
9. Limiting values  
Table 7:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to  
GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
0.5  
-
Max  
+4.6  
50  
Unit  
V
VCC  
IIK  
supply voltage  
input clamping  
current  
VI < 0 V  
mA  
[1]  
[1]  
VI  
input voltage  
0.5  
+4.6  
V
IOK  
output clamping  
current  
VO < 0 V  
-
50  
mA  
VO  
output voltage  
active mode and  
0.5  
+4.6  
V
Power-down mode  
IO  
output current  
VO = 0 V to VCC  
-
-
±20  
+50  
mA  
mA  
ICC  
quiescent supply  
current  
IGND  
Tstg  
Ptot  
ground current  
-
50  
mA  
°C  
storage temperature  
65  
+150  
250  
[2]  
total power  
dissipation  
Tamb = 40 °C to +125 °C  
-
mW  
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are  
observed.  
[2] For SC-88 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.  
For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.  
74AUP1G0832_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Preliminary data sheet  
Rev. 01.00 — 26 January 2006  
5 of 19  

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