5秒后页面跳转
74AUP1G0832GS PDF预览

74AUP1G0832GS

更新时间: 2024-02-14 21:29:44
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
19页 71K
描述
AUP/ULP/V SERIES, 3-INPUT AND-OR GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, 0.35 MM PITCH, SOT-1202, SON-6

74AUP1G0832GS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-363
包装说明:PLASTIC, SOT-363, SC-88, 6 PIN针数:6
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.33Is Samacsys:N
系列:AUP/ULP/VJESD-30 代码:R-PDSO-G6
JESD-609代码:e3长度:2 mm
负载电容(CL):30 pF逻辑集成电路类型:AND-OR GATE
最大I(ol):0.0017 A湿度敏感等级:1
功能数量:1输入次数:3
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TAPE AND REEL峰值回流温度(摄氏度):260
电源:1.2/3.3 VProp。Delay @ Nom-Sup:21.8 ns
传播延迟(tpd):21.8 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):0.8 V标称供电电压 (Vsup):1.1 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:1.25 mmBase Number Matches:1

74AUP1G0832GS 数据手册

 浏览型号74AUP1G0832GS的Datasheet PDF文件第1页浏览型号74AUP1G0832GS的Datasheet PDF文件第3页浏览型号74AUP1G0832GS的Datasheet PDF文件第4页浏览型号74AUP1G0832GS的Datasheet PDF文件第5页浏览型号74AUP1G0832GS的Datasheet PDF文件第6页浏览型号74AUP1G0832GS的Datasheet PDF文件第7页 
74AUP1G0832  
Philips Semiconductors  
Low-power 3-input AND-OR gate  
3. Quick reference data  
Table 1:  
Quick reference data  
GND = 0 V; Tamb = 25 °C; tr = tf 3 ns.  
Symbol Parameter  
Conditions  
CL = 5 pF; RL = 1 M;  
CC = 0.8 V  
CL = 5 pF; RL = 1 M;  
CC = 1.1 V to 1.3 V  
CL = 5 pF; RL = 1 MΩ;  
CC = 1.4 V to 1.6 V  
CL = 5 pF; RL = 1 M;  
CC = 1.65 V to 1.95 V  
CL = 5 pF; RL = 1 M;  
CC = 2.3 V to 2.7 V  
CL = 5 pF; RL = 1 MΩ;  
CC = 3.0 V to 3.6 V  
Min  
Typ  
Max  
Unit  
tPHL, tPLH HIGH-to-LOW and  
LOW-to-HIGH  
-
19.5  
-
ns  
V
propagation delay  
A, B or C to Y  
2.5  
1.9  
1.6  
1.4  
1.3  
5.6  
3.9  
3.1  
2.4  
2.2  
11.1  
6.4  
5.1  
3.7  
3.2  
ns  
ns  
ns  
ns  
ns  
V
V
V
V
V
CI  
input capacitance  
-
-
-
1.0  
3.3  
4.2  
-
-
-
pF  
pF  
pF  
[1] [2]  
[1] [2]  
CPD  
power dissipation  
capacitance  
VCC = 1.8 V; f = 1 MHz  
VCC = 3.3 V; f = 1 MHz  
[1] CPD is used to determine the dynamic power dissipation (PD in µW).  
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in V;  
N = number of inputs switching;  
Σ(CL × VCC2 × fo) = sum of the outputs.  
[2] The condition is VI = GND to VCC  
.
4. Ordering information  
Table 2:  
Ordering information  
Package  
Temperature range Name  
Type number  
Description  
Version  
SOT363  
74AUP1G0832GW 40 °C to +125 °C  
74AUP1G0832GM 40 °C to +125 °C  
SC-88  
plastic surface mounted package; 6 leads  
XSON6  
plastic extremely thin small outline package; no leads; SOT886  
6 terminals; body 1 × 1.45 × 0.5 mm  
74AUP1G0832GF 40 °C to +125 °C  
XSON6  
plastic extremely thin small outline package; no leads; SOT891  
6 terminals; body 1 × 1 × 0.5 mm  
74AUP1G0832_1  
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.  
Preliminary data sheet  
Rev. 01.00 — 26 January 2006  
2 of 19  

与74AUP1G0832GS相关器件

型号 品牌 描述 获取价格 数据表
74AUP1G0832GS,132 NXP 74AUP1G0832 - Low-power 3-input AND-OR gate

获取价格

74AUP1G0832GW NXP Low-power 3-input AND-OR gate

获取价格

74AUP1G0832GW NEXPERIA Low-power 3-input AND-OR gateProduction

获取价格

74AUP1G0832GW,125 NXP 74AUP1G0832 - Low-power 3-input AND-OR gate TSSOP 6-Pin

获取价格

74AUP1G08FW4-7 DIODES SINGLE 2 INPUT POSITIVE AND GATE

获取价格

74AUP1G08FZ4-7 DIODES SINGLE 2 INPUT POSITIVE AND GATE

获取价格