74AUP1G07
NXP Semiconductors
Low-power buffer with open-drain output
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
Max
(85 °C) (125 °C)
CL = 5 pF, 10 pF, 15 pF and 30 pF
CPD power dissipation fi = 1 MHz;
capacitance VI = GND to VCC
[3]
VCC = 0.8 V
-
-
-
-
-
-
0.5
0.6
0.6
0.7
0.9
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pF
pF
pF
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
[1] All typical values are measured at nominal VCC
.
[2] tpd is the same as tPZL and tPLZ
.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
12. Waveforms
V
I
V
A input
M
GND
t
t
PZL
PLZ
V
CC
Y output
V
M
V
V
X
OL
mna626
Measurement points are given in Table 9.
Logic level: VOL is the typical output voltage drop that occur with the output load.
Fig 7. The data input (A) to output (Y) propagation delays
Table 9.
Measurement points
Supply voltage
VCC
Input
Output
VM
VM
VX
0.8 V to 1.6 V
1.65 V to 2.7 V
3.0 V to 3.6 V
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
0.5 × VCC
VOL + 0.1 V
VOL + 0.15 V
VOL + 0.3 V
74AUP1G07_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 14 June 2007
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