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71V67803S166PF PDF预览

71V67803S166PF

更新时间： 2024-01-14 16:00:48
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 时钟静态存储器内存集成电路
页数 文件大小 规格书
24页 1195K
描述
512KX18 CACHE SRAM, 3.5ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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71V67803S166PF 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active零件包装代码：QFP
包装说明：14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100针数：100
Reach Compliance Code：unknown风险等级：5.75
Is Samacsys：N最长访问时间：3.5 ns
其他特性：PIPELINED ARCHITECTUREJESD-30 代码：R-PQFP-G100
JESD-609代码：e0长度：20 mm
内存密度：9437184 bit内存集成电路类型：CACHE SRAM
内存宽度：18湿度敏感等级：3
功能数量：1端子数量：100
字数：524288 words字数代码：512000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：512KX18
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
认证状态：COMMERCIAL座面最大高度：1.6 mm
最大供电电压 (Vsup)：3.465 V最小供电电压 (Vsup)：3.135 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN LEAD端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
处于峰值回流温度下的最长时间：20宽度：14 mm
Base Number Matches：1

71V67803S166PF 数据手册

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IDT71V67603, IDT71V67803, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with  
3.3V I/O, Pipelined Outputs, Single Cycle Deselect  
Commercial and Industrial Temperature Ranges  
AbsoluteMaximumRatings(1)  
RecommendedOperating  
TemperatureandSupplyVoltage  
Symbol  
Rating  
Commercial  
Unit  
Grade  
Temperature(1)  
0°C to +70°C  
-40°C to +85°C  
V
V
(2)  
SS  
DD  
DDQ  
V
TERM  
V
Terminal Voltage with  
Respect to GND  
-0.5 to +4.6  
V
Commercial  
Industrial  
0V  
0V  
3.3V±5%  
3.3V±5%  
3.3V±5%  
(3,6)  
(4,6)  
(5,6)  
TERM  
V
DD  
-0.5 to V  
Terminal Voltage with  
Respect to GND  
V
V
3.3V±5%  
5310 tbl 04  
NOTE:  
1. TA is the "instant on" case temperature.  
TERM  
V
DD  
-0.5 to V +0.5  
Terminal Voltage with  
Respect to GND  
RecommendedDCOperating  
Conditions  
TERM  
V
DDQ  
Terminal Voltage with  
Respect to GND  
-0.5 to V +0.5  
V
Symbol  
Parameter  
Core Supply Voltage  
I/O Supply Voltage  
Supply Voltage  
Min. Typ.  
3.135 3.3  
3.135 3.3  
Max.  
Unit  
oC  
oC  
oC  
W
(7)  
A
-0 to +70  
-55 to +125  
-55 to +125  
T
Operating Temperature  
DD  
V
3.465  
3.465  
0
V
V
V
V
V
BIAS  
Temperature  
Under Bias  
T
DDQ  
V
SS  
V
0
0
STG  
Storage  
Temperature  
T
____  
IH  
V
DD  
V +0.3  
Input High Voltage - Inputs  
Input High Voltage -I/O  
Input Low Voltage  
2.0  
2.0  
____  
____  
IH  
V
DDQ  
T
V
+0.3  
P
Power Dissipation  
DC Output Current  
2.0  
50  
(1)  
IL  
V
OUT  
-0.3  
0.8  
V
I
mA  
5310 tbl 05  
5310 tbl 03  
NOTES:  
NOTE:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VDD terminals only.  
1. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.  
3. VDDQ terminals only.  
4. Input terminals only.  
5. I/O terminals only.  
6. This is a steady-state DC parameter that applies after the power supplies have  
ramped up. Power supply sequencing is not necessary; however, the voltage  
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.  
7. TA is the "instant on" case temperature.  
165fBGACapacitance  
(TA = +25°C, f = 1.0MHz)  
100PinTQFPCapacitance  
(TA = +25°C, f = 1.0MHz)  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
Symbol  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
Symbol  
CIN  
CIN  
5
7
pF  
7
7
pF  
CI/O  
pF  
CI/O  
pF  
5310 tbl 07  
5310 tbl 07b  
119BGACapacitance  
(TA = +25°C, f = 1.0MHz)  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
7
7
pF  
CI/O  
pF  
5310 tbl 07a  
NOTE:  
1. This parameter is guaranteed by device characterization, but not production tested.  
6.442  
12345678...24

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