生命周期: | Active | 包装说明: | BGA, |
Reach Compliance Code: | compliant | HTS代码: | 8542.32.00.41 |
风险等级: | 5.64 | 最长访问时间: | 7.5 ns |
其他特性: | FLOW THROUGH ARCHITECTURE | JESD-30 代码: | R-PBGA-B119 |
内存密度: | 9437184 bit | 内存集成电路类型: | CACHE SRAM |
内存宽度: | 18 | 功能数量: | 1 |
端子数量: | 119 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX18 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
最大供电电压 (Vsup): | 3.465 V | 最小供电电压 (Vsup): | 3.135 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子位置: | BOTTOM |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
71V6790375BGGI8 | IDT | 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect |
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71V6790375BQG | IDT | 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect |
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71V6790375BQG8 | IDT | 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect |
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71V6790375BQGI | IDT | 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect |
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71V6790375BQGI8 | IDT | 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect |
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71V6790375PFG | IDT | 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect |
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