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71V3557SA85BQG8 PDF预览

71V3557SA85BQG8

更新时间: 2024-02-29 19:14:24
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
28页 523K
描述
SRAM

71V3557SA85BQG8 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

71V3557SA85BQG8 数据手册

 浏览型号71V3557SA85BQG8的Datasheet PDF文件第3页浏览型号71V3557SA85BQG8的Datasheet PDF文件第4页浏览型号71V3557SA85BQG8的Datasheet PDF文件第5页浏览型号71V3557SA85BQG8的Datasheet PDF文件第7页浏览型号71V3557SA85BQG8的Datasheet PDF文件第8页浏览型号71V3557SA85BQG8的Datasheet PDF文件第9页 
IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with  
ZBT™ Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs  
Commercial and Industrial Temperature Ranges  
Pin Configuration — 256K x 18  
Absolute Maximum Ratings (1)  
Commercial &  
Industrial Values  
Symbol  
Rating  
Unit  
(2 )  
VTERM  
Terminal Voltage with  
Respect to GND  
-0.5 to +4.6  
V
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81  
1
80  
79  
78  
77  
NC  
NC  
NC  
DDQ  
V
SS  
V
NC  
NC  
10  
A
(3,6)  
VTERM  
Terminal Voltage with  
Respect to GND  
-0.5 to VDD  
-0.5 to VDD +0.5  
-0.5 to VDDQ +0.5  
-0 to +70  
V
V
2
NC  
NC  
3
4
DDQ  
V
V
5
(4,6)  
76  
75  
74  
73  
SS  
VTERM  
Terminal Voltage with  
Respect to GND  
6
NC  
7
P1  
I/O  
8
8
I/O  
7
I/O  
(5,6)  
9
9
I/O  
72  
71  
70  
6
I/O  
VTERM  
Terminal Voltage with  
Respect to GND  
V
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
SS  
V
SS  
V
V
DDQ  
V
DDQ  
5
69  
68  
67  
66  
10  
I/O  
I/O  
11  
Commercial  
Operating Temperature  
oC  
oC  
oC  
oC  
W
I/O  
4
I/O  
(1)  
SS  
V
SS  
V
(7)  
(1)  
TA  
VDD  
(2)  
VSS  
65  
64  
DD  
DD  
V
SS/ZZ  
V
3
I/O  
2
I/O  
V
Industrial  
Operating Temperature  
-40 to +85  
(1,4)  
SS  
V
63  
62  
61  
60  
59  
58  
57  
56  
55  
12  
I/O  
13  
I/O  
DDQ  
DDQ  
V
V
V
TBIAS  
Temperature  
Under Bias  
-55 to +125  
SS  
14  
V
I/O  
SS  
1
I/O  
15  
I/O  
0
I/O  
NC  
NC  
P2  
I/O  
Storage  
Temperature  
-55 to +125  
TSTG  
NC  
SS  
V
SS  
V
V
,
54  
53  
DDQ  
V
DDQ  
PT  
Power Dissipation  
DC Output Current  
2.0  
50  
NC  
NC  
NC  
NC  
NC  
NC  
52  
51  
IOUT  
mA  
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50  
5282 tbl 06  
5282 drw 02a  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VDD terminals only.  
3. VDDQ terminals only.  
4. Input terminals only.  
5. I/O terminals only.  
6. This is a steady-state DC parameter that applies after the power supply has  
reached its nominal operating value. Power sequencing is not necessary;  
however, the voltage on any input or I/O pin cannot exceed VDDQ during power  
supply ramp up.  
Top View  
100TQFP  
NOTES:  
1. Pins14,64,and66donothavetobeconnecteddirectlytoVSSaslongastheinputvoltage  
is < VIL.  
2. Pin 16 does not have to be connected directly to VDD as long as the input voltage  
is > VIH.  
3. Pins 83 and 84 are reserved for future 8M and 16M respectively.  
4. Pin 64 supports ZZ (sleep mode) for the latest die revisions.  
7. TA is the "instant on" case temperature.  
100TQFPCapacitance(1)  
(TA = +25°C, F = 1.0MHZ)  
119BGACapacitance(1)  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
(TA = +25°C, F = 1.0MHZ)  
Symbol  
CIN  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
5
7
pF  
7
7
pF  
CI/O  
pF  
5282 tbl 07  
CI/O  
pF  
5282 tbl 07a  
119BGACapacitance(1)  
(TA = +25°C, F = 1.0MHZ)  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
TBD pF  
CI/O  
TBD pF  
5282 tbl 07b  
NOTE:  
1. This parameter is guaranteed by device characterization, but not production tested.  
6.462  

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