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71V2558SA200BGG PDF预览

71V2558SA200BGG

更新时间: 2023-02-15 00:00:00
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
28页 567K
描述
ZBT SRAM, 256KX18, 3.2ns, CMOS, PBGA119, 22 X 14 MM, ROHS COMPLIANT, PLASTIC, MS-028AA, BGA-119

71V2558SA200BGG 数据手册

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IDT71V2556, IDT71V2558, 128K x 36, 256K x 18, 3.3V Synchronous ZBT™ SRAMs  
with 2.5V I/O, Burst Counter, and Pipelined Outputs  
Commercial and Industrial Temperature Ranges  
Pin Configuration — 256K x 18  
AbsoluteMaximumRatings(1)  
Commercial &  
Symbol  
Rating  
Unit  
Industrial Values  
(2)  
V
TERM  
Te rm inal Vo ltag e with  
Respect to GND  
-0.5 to +4.6  
V
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81  
1
80  
NC  
NC  
NC  
DDQ  
A
NC  
NC  
10  
(3,6)  
(4,6)  
(5,6)  
V
TERM  
2
Te rm inal Vo ltag e with  
Respect to GND  
-0.5 to VDD  
V
V
V
79  
78  
77  
3
4
V
VDDQ  
5
V
SS  
76  
75  
74  
73  
V
SS  
VTERM  
Te rm inal Vo ltag e with  
Respect to GND  
-0.5 to VDD +0.5  
-0.5 to VDDQ +0.5  
6
NC  
NC  
I/O8  
NC  
I/OP1  
I/O  
I/O  
7
8
7
9
I/O9  
72  
71  
6
VTERM  
Te rm inal Vo ltag e with  
Respect to GND  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
V
SS  
VSS  
70  
V
DDQ  
VDDQ  
69  
68  
67  
66  
65  
64  
I/O10  
I/O  
I/O  
5
Commerical  
Operating Temperature  
I/O11  
4
-0 to +70  
oC  
(1)  
V
DD  
VSS  
(1)  
V
DD  
DD  
V
V
V
DD  
T (7)  
A
(1)  
V
DD  
(3)  
SS/ZZ  
Industrial  
Operating Temperature  
-40 to +85  
oC  
oC  
V
SS  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
I/O12  
I/O13  
I/O  
I/O  
3
2
V
DDQ  
V
V
DDQ  
SS  
TBIAS  
Temperature  
Under Bias  
-55 to +125  
V
SS  
I/O14  
I/O15  
I/OP2  
NC  
I/O  
I/O  
NC  
NC  
1
0
Storage  
-55 to +125  
oC  
TSTG  
Temperature  
V
SS  
VSS  
V
DDQ  
NC  
NC  
NC  
VDDQ  
P
T
Power Dissipation  
DC Output Current  
2.0  
50  
W
NC  
NC  
NC  
,
52  
51  
IOUT  
mA  
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50  
4875 tbl 06  
4875 drw 02a  
NOTES:  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated  
in the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
2. VDD terminals only.  
Top View  
TQFP  
NOTES:  
3. VDDQ terminals only.  
1. Pins 14, 16 and 66 do not have to be connected directly to VDD as long  
as the input voltage is VIH.  
2. Pins 83 and 84 are reserved for future 8M and 16M respectively.  
3. Pin 64 does not have to be connected directly to VSS as long as the input  
voltage is VIL; on the latest die revision this pin supports ZZ (sleep  
mode).  
4. Input terminals only.  
5. I/O terminals only.  
6. This is a steady-state DC parameter that applies after the power supply has  
reached its nominal operating value. Power sequencing is not necessary;  
however, the voltage on any input or I/O pin cannot exceed VDDQ during power  
supply ramp up.  
7. TA is the "instant on" case temperature.  
100TQFPCapacitance(1)  
(TA = +25° C, f = 1.0MHz)  
119 BGA Capacitance(1)  
Symbol  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
IN = 3dV  
OUT = 3dV  
Max. Unit  
(TA = +25° C, f = 1.0MHz)  
CIN  
V
5
7
pF  
Symbol  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
IN = 3dV  
OUT = 3dV  
Max. Unit  
CI/O  
V
pF  
CIN  
V
7
7
pF  
4875 tbl 07  
165 fBGA Capacitance(1)  
CI/O  
V
pF  
(TA = +25° C, f = 1.0MHz)  
4875 tbl 07a  
Symbol  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
IN = 3dV  
Max. Unit  
CIN  
V
TBD pF  
CI/O  
VOUT = 3dV  
TBD pF  
4875 tbl 07b  
NOTE:  
1. This parameter is guaranteed by device characterization, but not production tested.  
6.462  

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