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71V2546XS150PFG8 PDF预览

71V2546XS150PFG8

更新时间: 2024-11-17 00:32:55
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
21页 733K
描述
3.3V Synchronous ZBT SRAM

71V2546XS150PFG8 数据手册

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IDT71V2546S/XS  
128K x 36  
3.3V Synchronous ZBT™ SRAM  
2.5V I/O, Burst Counter  
Pipelined Outputs  
AddressandcontrolsignalsareappliedtotheSRAMduringoneclock  
cycle, andtwocycleslatertheassociateddatacycleoccurs, beitread  
or write.  
Features  
128K x 36 memory configurations  
Supports high performance system speed - 150 MHz  
The IDT71V2546 contains data I/O, address and control signal  
registers.Outputenableistheonlyasynchronoussignalandcanbeused  
todisabletheoutputsatanygiventime.  
(3.8 ns Clock-to-Data Access)  
ZBTTM Feature - No dead cycles between write and read  
cycles  
AClockEnable(CEN)pinallowsoperationoftheIDT71V2546tobe  
suspended as long as necessary. All synchronous inputs are ignored  
when(CEN)ishighandtheinternaldeviceregisterswillholdtheirprevious  
values.  
Internally synchronized output buffer enable eliminates the  
need to control OE  
Single R/W (READ/WRITE) control pin  
Positive clock-edge triggered address, data, and control  
Therearethreechipenablepins(CE1,CE2,CE2)thatallowtheuser  
to deselect the device when desired. If any one of these three are not  
assertedwhenADV/LDislow,nonewmemoryoperationcanbeinitiated.  
However,anypendingdatatransfers(readsorwrites)willbecompleted.  
Thedatabuswilltri-statetwocyclesafterchipisdeselectedorawriteis  
initiated.  
signal registers for fully pipelined applications  
4-word burst capability (interleaved or linear)  
Individual byte write (BW1 - BW4) control (May tie active)  
Three chip enables for simple depth expansion  
3.3V power supply (±5%), 2.5V I/O Supply (VDDQ)  
Packaged in a JEDEC standard 100-pin plastic thin quad  
TheIDT71V2546hasanon-chipburstcounter.Intheburstmode,the  
IDT71V2546 can provide four cycles of data for a single address  
presentedtotheSRAM.Theorderoftheburstsequenceisdefinedbythe  
LBOinputpin.TheLBOpinselectsbetweenlinearandinterleavedburst  
sequence. The ADV/LD signal is used to load a new external address  
(ADV/LD = LOW) or increment the internal burst counter (ADV/LD =  
HIGH).  
flatpack (TQFP) and 119 ball grid array (BGA)  
Description  
The IDT71V2546 is a 3.3V high-speed 4,718,592-bit (4.5 Megabit)  
synchronous SRAM. It is designed to eliminate dead bus cycles when  
turning the bus around between reads and writes, or writes and reads.  
Thus, theyhavebeengiventhenameZBTTM, orZeroBusTurnaround.  
TheIDT71V2546SRAMutilizeIDT's latesthigh-performanceCMOS  
process and is packaged in a JEDEC standard 14mm x 20mm 100-pin  
thinplasticquadflatpack(TQFP)aswellasa119ballgridarray(BGA).  
PinDescriptionSummary  
A0-A16  
Address Inputs  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
Input  
I/O  
Synchronous  
Synchronous  
Asynchronous  
Synchronous  
Synchronous  
Synchronous  
N/A  
Chip Enables  
CE , CE  
1
2
, CE  
2
Output Enable  
OE  
R/W  
Read/Write Signal  
Clock Enable  
CEN  
Individual Byte Write Selects  
Clock  
BW  
1
, BW  
2
, BW  
3
, BW  
4
CLK  
ADV/LD  
LBO  
Advance burst address / Load new address  
Linear / Interleaved Burst Order  
Sleep Mode  
Synchronous  
Static  
ZZ  
Synchronous  
Synchronous  
Static  
I/O  
0
-I/O31, I/OP1-I/OP4  
DD, VDDQ  
SS  
Data Input / Output  
Core Power, I/O Power  
Ground  
V
Supply  
Supply  
V
Static  
5294 tbl 01  
APRIL 2011  
1
©2011IntegratedDeviceTechnology,Inc.  
DSC-5294/07  

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