Datasheet > 71T75902

71T75902

更新时间： 2023-12-20 18:44:57

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
24页	295K
描述
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM

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数据手册

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71T75902 数据手册

71T75902 1M x 18, 2.5V Synchronous ZBT™ SRAM with

2.5V I/O, Burst Counter and Flow-Through Outputs

Commercial and Industrial Temperature Ranges

Pin Configuration — 1M x 18, PKG100^(1,2,3,4)

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

DDQ

A10

VDDQ

I/OP1

I/O

VSS

VDDQ

I/O

DDQ

I/O10

I/O11

(1)

71T75902

PKG100⁽⁴⁾

VSS

(1)

(2)

VSS

VDD

VSS

I/O

I/O12

I/O13

DDQ

VDDQ

VSS

I/O

I/O14

I/O15

I/OP2

VSS

DDQ

VDDQ

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

5319 drw 02a

Top View

100 TQFP

NOTES:

1. Pins14and66donothavetobeconnecteddirectlytoVSS aslongasthe inputvoltageis<VIL.

2. Pin16doesnothavetobeconnecteddirectlytoVDD aslongastheinputvoltageis>VIH.

3. Pins38,39and43willbepulledinternallytoVDDifnotactivelydriven. TodisabletheTAPcontrollerwithoutinterferingwithnormaloperation,severalsettingsarepossible. Pins38,39

and43couldbetiedtoVDDorVSSandpin42shouldbeleftunconnected. OrallJTAGinputs(TMS,TDIandTCK)pins38,39and43couldbeleftunconnected“NC”andtheJTAG

circuit will remain disabled from power up.

4. This text does not indicate orientation of the actual part-marking.

6.42

Apr.07.20

1 2 3 456 7 8...24

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