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71342LA25JG PDF预览

71342LA25JG

更新时间: 2024-11-23 20:53:51
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
14页 312K
描述
Dual-Port SRAM, 4KX8, 25ns, CMOS, PQCC52, 0.790 X 0.790 INCH, 0.170 INCH HEIGHT, GREEN, PLASTIC, LCC-52

71342LA25JG 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:QCCN, LDCC52,.8SQReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.27最长访问时间:25 ns
I/O 类型:COMMONJESD-30 代码:S-PQCC-N52
内存密度:32768 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:8功能数量:1
端口数量:2端子数量:52
字数:4096 words字数代码:4000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:4KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCN封装等效代码:LDCC52,.8SQ
封装形状:SQUARE封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
最大待机电流:0.0015 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.24 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

71342LA25JG 数据手册

 浏览型号71342LA25JG的Datasheet PDF文件第2页浏览型号71342LA25JG的Datasheet PDF文件第3页浏览型号71342LA25JG的Datasheet PDF文件第4页浏览型号71342LA25JG的Datasheet PDF文件第5页浏览型号71342LA25JG的Datasheet PDF文件第6页浏览型号71342LA25JG的Datasheet PDF文件第7页 
HIGH SPEED  
IDT71342SA/LA  
4K X 8 DUAL-PORT  
STATIC RAM  
WITH SEMAPHORE  
Features  
High-speed access  
Fully asynchronous operation from either port  
Full on-chip hardware support of semaphore signalling be-  
tween ports  
Battery backup operation—2V data retention (LA only)  
TTL-compatible; single 5V (±10%) power supply  
Available in plastic packages  
– Commercial:20/25/35/45/55/70ns(max.)  
– Industrial: 25ns (max.)  
Low-power operation  
– IDT71342SA  
Active: 700mW (typ.)  
Standby: 5mW (typ.)  
– IDT71342LA  
Industrial temperature range (–40°C to +85°C) is available  
for selected speeds  
Active: 700mW (typ.)  
Standby: 1mW (typ.)  
FunctionalBlockDiagram  
R/WR  
R/W  
L
CER  
CEL  
OER  
OEL  
I/O  
CONTROL  
I/O  
CONTROL  
I/O0R - I/O7R  
I/O0L- I/O7L  
MEMORY  
ARRAY  
SEMAPHORE  
LOGIC  
SEMR  
SEM  
L
ADDRESS  
DECODER  
ADDRESS  
DECODER  
A0R- A11R  
A0L- A11L  
2721 drw 01  
SEPTEMBER 2012  
1
DSC 2621/14  
©2012 IntegratedDeviceTechnology,Inc.  

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