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70V914S12PF PDF预览

70V914S12PF

更新时间: 2024-02-16 06:00:34
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
10页 108K
描述
TQFP-80, Tray

70V914S12PF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:QFP
包装说明:14 X 14MM, 1.40 MM HEIGHT, TQFP-80针数:80
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:25 ns
JESD-30 代码:S-PQFP-G80JESD-609代码:e3
长度:14 mm内存密度:36864 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:9
湿度敏感等级:3功能数量:1
端子数量:80字数:4096 words
字数代码:4000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:4KX9封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:SQUARE
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

70V914S12PF 数据手册

 浏览型号70V914S12PF的Datasheet PDF文件第1页浏览型号70V914S12PF的Datasheet PDF文件第2页浏览型号70V914S12PF的Datasheet PDF文件第3页浏览型号70V914S12PF的Datasheet PDF文件第5页浏览型号70V914S12PF的Datasheet PDF文件第6页浏览型号70V914S12PF的Datasheet PDF文件第7页 
IDT70V914S  
High-Speed 3.3V (4K x 9) Synchronous Dual-Port Static RAM  
Industrial and Commercial Temperature Ranges  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range(4) (VCC = 3.3V ± 0.3V)  
70V914S20  
Com'l  
70V914S25  
Com'l  
& Ind  
& Ind  
Symbol  
Parameter  
Test Condition  
Version  
COM'L  
Typ.(2)  
80  
Max.  
140  
200  
55  
Typ.(2)  
Max.  
130  
190  
50  
Unit  
ICC  
Dynamic Operating  
Current  
(Both Ports Active)  
mA  
75  
75  
25  
25  
45  
45  
CE  
L
and CER = VIL,  
Outputs Disabled  
(1)  
IND  
80  
f = fMAX  
ISB1  
Standby Current  
(Both Ports - TTL  
Level Inputs)  
mA  
mA  
COM'L  
IND  
30  
CE  
L
and CER = VIH  
(1)  
f = fMAX  
30  
85  
80  
ISB2  
Standby Current  
(One Port - TTL  
Level Inputs)  
COM'L  
IND  
55  
85  
80  
CE = VIL and  
CE"AB" = VIH  
(3)  
55  
100  
95  
Active Port Outputs  
Disabled, f=fMAX  
(1)  
I
SB3  
Full Standby  
Both Ports CE  
CE > VCC - 0.2V  
IN > VCC - 0.2V or  
IN < 0.2V, f = 0(2)  
R
and  
mA  
mA  
COM'L  
IND  
3
3
15  
15  
3
3
15  
15  
Current (Both  
Ports - All CMOS  
Level Inputs)  
L
V
V
ISB4  
Full Standby  
Current (One  
Port - All CMOS  
Level Inputs)  
COM'L  
IND  
55  
55  
85  
45  
45  
80  
95  
CE < 0.2V and  
CE"BA" > VCC - 0.2V  
(3)  
V
IN > VCC - 0.2V or  
100  
V
IN < 0.2V, Active Port  
Outputs Disabled  
(1)  
f = fMAX  
5616 tbl 06  
NOTES:  
1. At fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input levels  
of GND to 3V.  
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.  
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".  
4. Vcc = 3.3V, TA = 25°C for Typ, and are not production tested. ICC DC = 150mA (Typ).  
6.42  
4

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