生命周期: | Active | 包装说明: | BGA, |
Reach Compliance Code: | compliant | HTS代码: | 8542.32.00.41 |
风险等级: | 5.7 | 最长访问时间: | 4.2 ns |
其他特性: | PIPELINED OR FLOW THROUGH ARCHITECTURE | JESD-30 代码: | S-PBGA-B208 |
内存密度: | 9437184 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 36 | 功能数量: | 1 |
端子数量: | 208 | 字数: | 262144 words |
字数代码: | 256000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 256KX36 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
最大供电电压 (Vsup): | 3.45 V | 最小供电电压 (Vsup): | 3.15 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | BALL | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
70V7519S133BFGI | IDT | 暂无描述 |
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70V7519S133BFGI8 | IDT | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM |
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70V7519S133BFI | IDT | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. |
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70V7519S133DR | IDT | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. |
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|
70V7519S133DRG | IDT | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM |
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70V7519S133DRG8 | IDT | Dual-Port SRAM, 256KX36, 4.2ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, GREEN, PLASTIC, |
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70V7519S133DRGI | IDT | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM |
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|
70V7519S133DRGI8 | IDT | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM |
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|
70V7519S133DRI | IDT | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. |
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|
70V7519S166BC | IDT | HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2. |
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