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70V35S25PFGI PDF预览

70V35S25PFGI

更新时间: 2024-09-29 14:46:55
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
17页 151K
描述
Dual-Port SRAM, 8KX18, 25ns, CMOS, PQFP100, TQFP-100

70V35S25PFGI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFP
包装说明:LFQFP,针数:100
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.23
最长访问时间:25 nsJESD-30 代码:S-PQFP-G100
JESD-609代码:e3长度:14 mm
内存密度:147456 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端子数量:100
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX18
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

70V35S25PFGI 数据手册

 浏览型号70V35S25PFGI的Datasheet PDF文件第2页浏览型号70V35S25PFGI的Datasheet PDF文件第3页浏览型号70V35S25PFGI的Datasheet PDF文件第4页浏览型号70V35S25PFGI的Datasheet PDF文件第5页浏览型号70V35S25PFGI的Datasheet PDF文件第6页浏览型号70V35S25PFGI的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V  
8K x 18 DUAL-PORT  
STATIC RAM  
PRELIMINARY  
IDT70V35S/L  
Features  
True Dual-Ported memory cells which allow simultaneous  
IDT70V35 easily expands data bus width to 36 bits or more  
using the Master/Slave select when cascading more than  
one device  
M/S = VIH for BUSY output flag on Master  
M/S = VIL for BUSY input on Slave  
reads of the same memory location  
High-speed access  
– Commercial:15/20/25ns (max.)  
Industrial:20/25ns (max.)  
Low-power operation  
BUSY and Interrupt Flag  
On-chip port arbitration logic  
IDT70V35S  
Full on-chip hardware support of semaphore signaling  
between ports  
Fully asynchronous operation from either port  
LVTTL-compatible, single 3.3V (±0.3V) power supply  
Available in a 100-pin TQFP  
Active:430mW(typ.)  
Standby: 3.3mW (typ.)  
IDT70V35L  
Active:415mW(typ.)  
Standby: 660µW (typ.)  
Separate upper-byte and lower-byte control for multiplexed  
Industrial temperature range (-40°C to +85°C) is available  
for selected speeds  
bus compatibility  
Functional Block Diagram  
WL  
R/  
R/WR  
UBR  
UBL  
LBR  
CER  
OER  
LBL  
CEL  
OEL  
,
I/O8L-I/O17L  
I/O8R-I/O17R  
I/O  
Control  
I/O  
Control  
I/O0R-I/O7R  
I/O0L-I/O7L  
(1,2)  
BUSYL  
(1,2)  
BUSYR  
A12R  
A12L  
A0L  
Address  
Decoder  
MEMORY  
ARRAY  
Address  
Decoder  
A0R  
13  
13  
ARBITRATION  
INTERRUPT  
SEMAPHORE  
LOGIC  
CER  
OER  
R/WR  
CEL  
OEL  
R/WL  
SEMR  
INTR  
SEML  
INTL  
(2)  
(2)  
M/S  
5624 drw 01  
NOTES:  
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.  
2. BUSY outputs and INT outputs are non-tri-stated push-pull.  
JUNE 2000  
1
DSC-5624/1  
©2000IntegratedDeviceTechnology,Inc.  

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