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70V261L55PFG8 PDF预览

70V261L55PFG8

更新时间: 2024-02-10 14:29:20
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
17页 338K
描述
Dual-Port SRAM, 16KX16, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100

70V261L55PFG8 技术参数

生命周期:Active包装说明:LFQFP,
Reach Compliance Code:compliantECCN代码:3A991
HTS代码:8542.32.00.41风险等级:5.73
Is Samacsys:N最长访问时间:55 ns
JESD-30 代码:S-PQFP-G100JESD-609代码:e3
长度:14 mm内存密度:262144 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:16
功能数量:1端子数量:100
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16KX16
封装主体材料:PLASTIC/EPOXY封装代码:LFQFP
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL座面最大高度:1.6 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:QUAD
宽度:14 mmBase Number Matches:1

70V261L55PFG8 数据手册

 浏览型号70V261L55PFG8的Datasheet PDF文件第11页浏览型号70V261L55PFG8的Datasheet PDF文件第12页浏览型号70V261L55PFG8的Datasheet PDF文件第13页浏览型号70V261L55PFG8的Datasheet PDF文件第14页浏览型号70V261L55PFG8的Datasheet PDF文件第15页浏览型号70V261L55PFG8的Datasheet PDF文件第16页 
IDT70V261S/L  
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt  
Industrial and Commercial Temperature Ranges  
Ordering Information  
XXXXX  
A
999  
A
A
A
A
Device  
Type  
Power  
Speed  
Package  
Process/  
Temperature  
Range  
Blank  
8
Tube or Tray  
Tape and Reel  
Blank  
I(1)  
Commercial (0°C to +70°C)  
Industrial (-40°C to +85°C)  
G(2)  
PF  
Green  
100-pin TQFP (PN100-1)  
Commercial & Industrial  
Commercial Only  
Commercial Only  
25  
35  
55  
Speed in nanoseconds  
S
L
Standard Power  
Low Power  
256K (16K x 16) 3.3V Dual-Port RAM w/Interrupt  
70V261  
3040 drw 19  
NOTES:  
1. For other speeds, packages and powers contact your sales office.  
2. Green parts available. For specific speeds, packages and powers contact your local sales office.  
Datasheet Document History  
3/25/99:  
Initiateddatasheetdocumenthistory  
Convertedtonewformat  
Cosmeticandtypographicalcorrections  
Addedadditionalnotestopinconfigurations  
Changeddrawingformat  
Changed660mWto660µW  
Replaced IDT logo  
Increatedstoragetemperatureparameter  
ClarifiedTA Parameter  
DCElectricalparameters–changedwordingfrom"open"to"disabled"  
Changed±200mVto0mVinnotes  
Page 2  
Page 1  
Page 4  
Page 5  
6/10/99:  
8/30/99:  
11/12/99:  
6/7/00:  
12/01/01:  
02/15/08:  
Page 2  
Page 5  
Addeddaterevisiontopinconfigurations  
AddedI-tempvaluesfor25nstoDCElectricalCharacteristics  
Pages 4, 5, 6, 7, 10 & 12 Removed I-temp footnotes from all tables  
Page 17  
Page 1 & 17  
Page 1  
AddedI-tempofferinginorderinginformation  
Replaced TM logo with ® logo  
Addedgreenavailabilitytofeatures  
Page 17  
Page 17  
Page 17  
Page 17  
Addedgreenindicatortoorderinginformation  
Addeddiesteppingindcatortoorderinginformation  
Removed "IDT" from orderable part number  
AddedT&RindicatortoandremovedWsteppingfromorderinginformation  
01/19/09:  
09/29/12:  
Page 2, 14 & 17 Correctedmiscellaneoustypo’s  
CORPORATE HEADQUARTERS  
6024 Silver Creek Valley Road  
San Jose, CA 95138  
for SALES:  
for Tech Support:  
408-284-2794  
DualPortHelp@idt.com  
800-345-7015 or 408-284-8200  
fax: 408-284-2775  
www.idt.com  
Š
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
17  
6.42  

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