Datasheet > 70V261

70V261

更新时间： 2023-12-20 18:44:53

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
19页	258K
描述
16K x 16 3.3V Dual-Port RAM w/Int

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70V261 数据手册

70V261S/L

High-Speed 16K x 16 Dual-Port Static RAM with Interrupt

Industrial and Commercial Temperature Ranges

3.3V

AC Test Conditions

Input Pulse Levels

GND to 3.0V

3ns Max.

1.5V

590Ω

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

Output Load

DATAOUT

BUSY

INT

DATAOUT

1.5V

30pF

5pF*

435Ω

Figures 1 and 2

3040 tbl 10

3040 drw 04

3040 drw 03

Figure 1. AC Output Test Load

Figure 2. Output Test Load

(for tLZ, tHZ, tWZ, tOW)

* Including scope and jig.

Timing of Power-Up Power-Down

tPU

tPD

ICC

ISB

3040 drw 05

AC Electrical Characteristics Over the

OperatingTemperatureandSupplyVoltageRange⁽⁴⁾

70V261X25

70V261X55

Com'l Only

70V261X35

Com'l Only

Com'l

& Ind

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Unit

READ CYCLE

____

ACE

ABE

AOE

SOP

SAA

Read Cycle Time

____

Address Access Time

Chip Enable Access Time⁽³⁾

____

Byte Enable Access Time⁽³⁾

Output Enable Access Time

____

Output Hold from Address Change

Output Low-Z Time^(1,2)

____

Output High-Z Time^(1,2)

____

Chip Enable to Power Up Time⁽²⁾

Chip Disable to Power Down Time⁽²⁾

Semaphore Flag Update Pulse (OE or SEM)

Semaphore Address Access Time

____

3040 tbl 11

NOTES:

1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization, but is not production tested.

3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.

4. 'X' in part number indicates power rating (S or L).

6.642

Jun.04.21

1...3 4 567 8 9...19

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