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70EPS12 PDF预览

70EPS12

更新时间: 2024-11-26 21:21:15
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
6页 104K
描述
DIODE 70 A, 1200 V, SILICON, RECTIFIER DIODE, POWIRTAB-1, Rectifier Diode

70EPS12 技术参数

生命周期:Active包装说明:R-PSFM-D1
针数:1Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.74
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSFM-D1
最大非重复峰值正向电流:950 A元件数量:1
相数:1端子数量:1
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:70 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:1200 V
表面贴装:NO端子形式:SOLDER LUG
端子位置:SINGLEBase Number Matches:1

70EPS12 数据手册

 浏览型号70EPS12的Datasheet PDF文件第2页浏览型号70EPS12的Datasheet PDF文件第3页浏览型号70EPS12的Datasheet PDF文件第4页浏览型号70EPS12的Datasheet PDF文件第5页浏览型号70EPS12的Datasheet PDF文件第6页 
Bulletin I2151 rev. C 12/02  
SAFEIR Series  
70EPS..  
INPUT RECTIFIER DIODE  
IF(RMS) = 135A  
VF< 1.15V @ 70A  
I
FSM = 900A  
VRRM 800 to 1200V  
Description/ Features  
Major Ratings and Characteristics  
The 70EPS.. rectifier SAFEIR series has been  
Characteristics  
70EPS.. Units  
optimized for very low forward voltage drop, with  
moderateleakage.  
I
Sine waveform  
@TC = 103°C  
F(AV)  
70  
A
The glass passivation technology used has reliable  
operation up to 150° C junction temperature.  
Available in the new PowIRtabTM package, this new  
series is suitable for a large range of applications  
combiningexcellentdietofootprintratioandsturdeness  
connectivity for use in high current environments.  
I
135  
800 to 1200  
900  
A
F(RMS)  
V
range(*)  
V
A
RRM  
I
FSM  
V
@70A,T =25°C  
J
1.12  
V
F
T
range  
-40 to150  
°C  
J
Case Styles  
70EPS..J  
70EPS..  
(*) for higher voltage up to 1600V contact factory  
www.irf.com  
1

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