Datasheet > 6N70F

6N70F

更新时间： 2023-12-06 20:03:26

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
3页	672K
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场效应晶体管

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6N70F 数据手册

6N70F

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently

damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not

implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C

4. ISD ≤ 6A, di/dt ≤140A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate- Source Leakage Current

Gate Threshold Voltage

V_(BR)DSS

I_DSS

V_GS=0V,I_D=250µA

V_DS=700V, V_GS=0V

V_DS=0V, V_GS=±20V

V_DS=V_GS, I_D=250μA,VDS=5V

V_GS=10V,I_D=3A

700

μA

I_GSS

±1

4.0

1.8

1.5

1200

115

160

V_GS(th)

2.0

Static drain-Source On-State resistance R_DS(on)

1.6

Ω

Drain-Source Diode Forward Voltage

Input Capacitance

V_SD

C_ISS

C_OSS

C_RSS

t_D(ON)

t_R

I_SD=6A,V_GS=0V

1075

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

V_DS=25V,V_GS=0V,f=1.0MHz

8.3

23.1

_DD= 350V, I_D=6A,

R_G=11.5Ω

Turn-Off Delay Time

Fall Time

t_D(OFF)

t_F

Total Gate Charge

Gate-source Charge

Gate-drain Charge

Q_g

V_DS=560V,V_GS=10V

I_D=6A

Q_gs

Q_gd

Maximum Body-Diode Continuous

Current

I_S

Maximum Body-Diode Pulsed Current

I_SM

Notes: 1. Pulse Test: Pulse width ≤ 250μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

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mail:lge@lgesemi.com

Revision:20170701-P1

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